Abstract:Transfer techniques based on two dimensional (2D) materials and devices offer immense potential towards their industrial integration with the existing silicon based electronics. To achieve high quality devices, there is an urgent requirement for the etching-free, and clean transfer that retain original semiconducting properties of layered channel materials. In parallel, transfer of metal electrode arrays on the 2D semiconductors also attract attention towards large-scale integration for commercial applications. Here, we demonstrate a facile PMMA-assisted etching-free one-step approach to transfer both 2D channels and metal electrodes without damaging the contact region. The direct device transfer (DDT) technique enables residue-free monolayer MoS2 as channel material towards achieving doping-free intrinsic transistors with enhanced performances. The crystalline quality, strain relaxation, and interfacial coupling effects are studied using Raman and photoluminescence spectra with spatial mapping. Post device transfer, a reduced pinning effect is observed by the effective modulation of gate tunable drain currents in MoS2 transistors at room temperature. Furthermore, the extracted Schottky barrier heights, temperature dependence of threshold voltage shifts, hysteresis evolution, and mobility enhancements validates the improved transistor performances in transferred devices. The proposed DDT method can be utilized to directly transfer array of devices of 2D materials and heterostructures skipping various cumbersome steps in between and hence could offer high performance reliable electronic applications.

What problem does this paper attempt to address?

The key problem that this paper attempts to solve is how to achieve high - quality, non - destructive direct device transfer of two - dimensional materials (especially monolayer MoS2) and their metal electrode arrays, in order to improve transistor performance. Specifically, the researchers are committed to developing a simple, non - etching one - time transfer method (Direct Device Transfer, DDT) to ensure that the contact area is not damaged during the transfer process and to retain the original semiconductor characteristics. ### Main problems include: 1. **High - quality transfer**: - Traditional transfer methods usually involve chemical etching, which may damage the film quality and introduce chemical residues, thus affecting device performance. Therefore, a non - etching, clean transfer method is required to maintain the original semiconductor characteristics of two - dimensional materials. 2. **Metal electrode transfer**: - Simultaneously transferring the metal electrode array onto the two - dimensional semiconductor is crucial for large - scale integration and commercial applications. However, most of the existing methods only focus on monolayer or metal transfer, lacking methods for simultaneously transferring the entire device. 3. **Improving transistor performance**: - By improving the transfer technology, reducing interface defects and strain, and optimizing carrier injection, key performance indicators such as the on - off ratio and mobility of transistors are improved. ### Solutions: The researchers proposed a non - etching one - time transfer method assisted by PMMA (polymethyl methacrylate), which can simultaneously transfer the monolayer MoS2 channel and silver (Ag) metal electrodes. The specific steps are as follows: - **PMMA coating**: Coat a relatively thick layer of PMMA on the growth substrate. - **Water - immersion stripping**: Partially dissolve the adhesion layer between PMMA and the growth substrate by soaking in water, thereby achieving the stripping of the PMMA/device stack. - **Hot acetone cleaning**: Use hot acetone to dissolve PMMA and remove residual polymers to ensure that the transferred surface has no residue. Through this method, the researchers achieved high - quality monolayer MoS2 transfer and verified its significant improvement in transistor performance. The experimental results show that the transferred device exhibits a higher on - off ratio (increased from \(10^{2}\) to \(> 10^{6}\)), a lower hysteresis effect, and enhanced mobility (increased by about three times). In addition, Raman and PL spectral analysis confirmed the improvement of strain release and interface coupling effects. ### Conclusion: This research provides a simple and effective non - etching direct device transfer method, which is suitable for large - scale integration of two - dimensional materials and their heterostructures, paving the way for efficient integration of future flexible electronic devices and CMOS technology.

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