Abstract:Due to the pristine interface of the 2D/3D face-tunneling heterostructure with an ultra-sharp doping profile, the 2D/3D tunneling field-effect transistor (TFET) is considered as one of the most promising low-power devices that can simultane-ously obtain low off-state current (IOFF), high on-state current (ION) and steep subthreshold swing (SS). As a key element for the 2D/3D TFET, the intensive exploration of the tunnel diode based on the 2D/3D heterostructure is in urgent need. The transfer technique composed of the exfoliation and the release process is currently the most common approach to fabri-cating the 2D/3D heterostructures. However, the well-established transfer technique of the 2D materials is still unavailable. Only a small part of the irregular films can usually be obtained by mechanical exfoliation, while the choice of the chemical exfoliation may lead to the contamination of the 2D material films by the ions in the chemical etchants. Moreover, the defor-mation of the 2D material in the transfer process due to its soft nature also leads to the nonuniformity of the transferred film, which is one of the main reasons for the presence of the wrinkles and the stacks in the transferred film. Thus, the large-scale fabrication of the high-quality 2D/3D tunnel diodes is limited. In this article, a comprehensive transfer technique that can mend up the shortages mentioned above with the aid of the water and the thermal release tape (TRT) is proposed. Based on the method we proposed, the MoS2/Si tunnel diode is experimentally demonstrated and the transferred monolayer MoS2 film with the relatively high crystal quality is confirmed by atomic force microscopy (AFM), scanning electron microscopy (SEM), and Raman characterizations. Besides, the prominent negative differential resistance (NDR) effect is observed at room temperature, which verifies the relatively high quality of the MoS2/Si heterojunction. The bilayer MoS2/Si tunnel diode is also experimentally fabricated by repeating the transfer process we proposed, followed by the specific analysis of the electrical characteristics. This study shows the advantages of the transfer technique we proposed and indicates the great application foreground of the fabricated 2D/3D heterostructure for ultralow-power tunneling devices.

A facile direct device transfer of monolayer MoS2 towards improvement in transistor performances

MoS2/Si Tunnel Diodes Based on Comprehensive Transfer Technique

Multilayer MoS2 Transistors Enabled by a Facile Dry-Transfer Technique and Thermal Annealing

Enhanced Mobility in MoS2 Thin Film Transistors Through Kr Ion Beam-Generated Surface Defects

A "click" Reaction to Engineer MoS2 Field-Effect Transistors with Low Contact Resistance.

Large-Area Transfer of 2D TMDCs Assisted by Water-soluble layer for Potential Device Applications

Wafer-scale Transferred Multilayer MoS2 for High Performance Field Effect Transistors

PdSe2/MoSe2: A promising van der waals heterostructure for field effect transistor application

High-Performance Wafer-Scale MoS2 Transistors Toward Practical Application

High Performance Few-Layer MoS2 Transistor Arrays with Wafer Level Homogeneity Integrated by Atomic Layer Deposition

H2S assisted contact engineering: a universal approach to enhance hole conduction in all TMD Field-Effect Transistors and achieve ambipolar CVD MoS2 Transistors

High-Fidelity Transfer of 2D Semiconductors and Electrodes for Van Der Waals Devices

Pushing the Performance Limit of Sub-100 nm Molybdenum Disulfide Transistors.

Top-Down Integration of Molybdenum Disulfide Transistors with Wafer-Scale Uniformity and Layer Controllability.

Progress in Contact, Doping and Mobility Engineering of MoS2: An Atomically Thin 2D Semiconductor

Molecular Approach to Electrochemically Switchable Monolayer MoS2 Transistors

High Mobility Transistors and Flexible Optical Synapses Enabled by Wafer-Scale Chemical Transformation of Pt-Based 2D Layers

Monolayer Molybdenum Disulfide Transistors with Single-Atom-Thick Gates.

Performance and stability improvement of CVD monolayer MoS2 transistors through HfO2 dielectrics engineering

Crested two-dimensional transistors

Approaching Ohmic Contacts for Ideal Monolayer MoS2 Transistors Through Sulfur-Vacancy Engineering