Abstract:Two-dimensional (2D) metallic transition metal dichalcogenides (MTMDCs) have received great research attention due to their exotic physical properties (such as charge-density wave (CDW) order, superconductivity, and magnetism) and potential applications in nano-electronics and energy-related fields. To fully promote the fundamental researches or the versatile applications of such 2D MTMDCs. the preparation of mono- or multilayered nanosheets/films with high crystalline quality is highly needed. In this review, recent research achievements towards the controllable syntheses of MTMDCs through chemical vapor deposition (CVD) method, the exotic physical properties of MTMDCs, as well as their applications in FET devices and electrocatalytic HER are highlighted. CVD method can meet many sample requirements such as large domains. adjustable layer thickness, and high crystal quality. Meanwhile. it is compatible with modem semiconductor technology. Thus. this strategy has been extended to the growth of MTMDCs, and allowed for the successful synthesis of tunable thickness MTMDCs nanosheets, large-area-uniform ultrathin MTMDCs films, vertically oriented 1T-TaS2 nanosheets and high-quality MTMDCs nanosheet powders. All of these synthetic routes and corresponding crucial influencing factors arc summarized. The different growth mechanisms via the one-step reaction and deposition of gaseous metal and chalcogen feedstocks, or the sulphurisation of pre-deposited metal-based precursors are introduced. In addition, the differences in growth behaviour caused by commonly used amorphous SiO2/Si, insulating single crystal substrates (e.g., mica), unique conducing substrates (e.g., Au foil), porous substrates (e.g., nanoporous gold), and novel microcrystalline NaCl crystals arc comparatively presented. Simultaneously. the exotic physical phenomena in 2D MTMDCs, such as CDW order. unconventional superconductivity, and magnetism are comprehensively discussed. In particular, this review focuses on the introduction about the origin of CDW order and its thickness-dependence in MTMDCs, as well as the interplay between CDW order and superconductivity in the 2D limit. The challenges regarding the exploration of fundamental physical properties are also proposed. The next part deals with the potential applications of 2D MTMDCs in advanced nano-electronics and energy-related fields. Notably, the excellent electrical conductivities endow MTMDCs as electrodes to improve the electrical contact of semiconducting TMDC field effect transistor (FET) devices. Typically, lateral VS2-MoS2 contact contributes to 6-fold improved field-effect mobility for monolayer MoS2. compared to the conventional on-top nickel contacts. More intriguingly, the 2D metal-semiconductor TMDCs heterostructures present either 2D Schottky barrier diodes or Ohmic contact-type junctions depending on different band alignments (e.g., VSe2 with WSe2 or MoSe2). Motivated by those experimental results, we believe that significant research interests would be sparked about the oriented syntheses of 2D metal-semiconductor TMDCs heterostructures towards versatile applications in electronic and optoelectronic devices. Furthermore, both theoretical predictions and experimental results have proven the superior electrocatalytic performances of MTMDCs in hydrogen evolution reactions (HERs) compared to semiconducting TMDCs, due to their abundant active sites located on both the edges and basal planes and their excellent electrical conductivities. Therefore, MTMDC materials are promising candidates as the non-noble metal catalysts for HER in view of their excellent surface/edge activity, high stability, and compatibility with the batch production methods. Finally, challenges regarding the preparation of MTMDC are discussed, and the future research directions in the advanced nano-electronics and energy-related fields are also proposed.

Investigation on Contact Properties of 2D van der Waals Semimetallic 1T-TiS 2 /MoS 2 Heterojunctions

Mechanisms of Controllable Growth and Ohmic Contact of Two-Dimensional Molybdenum Disulfide: Insight from Atomistic Simulations

Robust transport of charge carriers in in-plane 1T′-2H MoTe2 homojunctions with ohmic contact

Progress in Contact, Doping and Mobility Engineering of MoS2: An Atomically Thin 2D Semiconductor

Electron Transport and Device Physics in Monolayer Transition-Metal Dichalcogenides

Layer-dependent Chemically Induced Phase Transition of Two-dimensional MoS2.

First principles studies on the electronic and contact properties of single layer 2H-MoS 2 /1T′-MX 2 heterojunctions

Electrical Contacts to Two-Dimensional Transition-Metal Dichalcogenides

Tunable Contact Types and Interfacial Electronic Properties in TaS2/MoS2 and TaS2/WSe2 Heterostructures

Topological van der Waals Contact for Two-Dimensional Semiconductors

Tunable Doping of Rhenium and Vanadium into Transition Metal Dichalcogenides for Two-Dimensional Electronics

Silicon-processes-compatible contact engineering for two-dimensional materials integrated circuits

Toward the Growth of High Mobility 2D Transition Metal Dichalcogenide Semiconductors

Metal Contacts On Physical Vapor Deposited Monolayer Mos

Two-Dimensional MX2 Semiconductors for Sub-5 nm Junctionless Field Effect Transistors

Large-Scale Vertical 1T′/2H MoTe2 Nanosheet-Based Heterostructures for Low Contact Resistance Transistors

In-plane Schottky-barrier Field-Effect Transistors Based on 1 T /2 H Heterojunctions of Transition-Metal Dichalcogenides

Analyzing the Carrier Mobility in Transition-metal Dichalcogenide MoS2 Field-effect Transistors

Innovations of metallic contacts on semiconducting 2D transition metal dichalcogenides toward advanced 3D-structured field-effect transistors

ZrTe2 Compound Dirac Semimetal Contacts for High-Performance MoS2 Transistors.

Controllable syntheses and potential applications of two dimensional metallic transition metal dichalcogenides