Fermi-level depinning of 2D transition metal dichalcogenide transistors

Ruo-Si Chen,Guanglong Ding,Ye Zhou,Su-Ting Han

DOI: https://doi.org/10.1039/d1tc01463c

IF: 6.4

2021-01-01

Journal of Materials Chemistry C

Abstract:In this review, we summarize the recent progress on how to circumvent FLP between 2D TMD semiconductors and metals.

materials science, multidisciplinary,physics, applied

What problem does this paper attempt to address?

Fermi Level Pinning Dependent 2D Semiconductor Devices: Challenges and Prospects

Xiaochi Liu,Min Sup Choi,Euyheon Hwang,Won Jong Yoo,Jian Sun

DOI: https://doi.org/10.1002/adma.202108425

IF: 29.4

2022-02-25

Advanced Materials

Abstract:Motivated by the high expectation for efficient electrostatic modulation of charge transport at very low voltages, atomically thin 2D materials with a range of bandgaps are investigated extensively for use in future semiconductor devices. However, researchers face formidable challenges in 2D device processing mainly originated from the out-of-plane van der Waals (vdW) structure of ultrathin 2D materials. As major challenges, untunable Schottky barrier height and the corresponding strong Fermi level pinning (FLP) at metal interfaces are observed unexpectedly with 2D vdW materials, giving rise to unmodulated semiconductor polarity, high contact resistance, and lowered device mobility. Here, FLP observed from recently developed 2D semiconductor devices is addressed differently from those observed from conventional semiconductor devices. It is understood that the observed FLP is attributed to inefficient doping into 2D materials, vdW gap present at the metal interface, and hybridized compounds formed under contacting metals. To provide readers with practical guidelines for the design of 2D devices, the impact of FLP occurring in 2D semiconductor devices is further reviewed by exploring various origins responsible for the FLP, effects of FLP on 2D device performances, and methods for improving metallic contact to 2D materials.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Fermi Level Depinning in Two-Dimensional Materials Using a Fluorinated Bilayer Graphene Barrier

Cunzhi Sun,Cheng Xiang,Rongdun Hong,Feng Zhang,Timothy J. Booth,Peter Bøggild,Manh-Ha Doan

DOI: https://doi.org/10.1021/acsaelm.2c00609

IF: 4.494

2022-08-10

ACS Applied Electronic Materials

Abstract:Strong Fermi level pinning (FLP), often attributed to metal-induced gap states at the interfacial contacts, severely reduces the tunability of the Schottky barrier height of the junction and limits applications of two-dimensional (2D) materials in electronics and optoelectronics. Here, we show that fluorinated bilayer graphene (FBLG) can be used as a barrier to effectively prevent FLP at metal/2D material interfaces. FLBG can be produced via short exposure (1–3 min) to SF6 plasma that fluorinates only the top layer of a bilayer graphene with covalent C–F bonding, while the bottom layer remains intrinsic, resulting in a band gap opening of about 75 meV. Inserting FBLG between the metallic contacts and a layer of MoS2 reduces the Schottky barrier height dramatically for the low-work function metals (313 and 260 meV for Ti and Cr, respectively) while it increases for the high-work function one ( 160 meV for Pd), corresponding to an improved pinning factor. Our results provide a straightforward method to generate atomically thin dielectrics with applications not only for depinning the Fermi level at metal/transition metal dichalcogenide interfaces but also for solving many other problems in electronics and optoelectronics.

materials science, multidisciplinary,engineering, electrical & electronic
Doping, Contact and Interface Engineering of Two-Dimensional Layered Transition Metal Dichalcogenides Transistors

Yuda Zhao,Kang Xu,Feng Pan,Changjian Zhou,Feichi Zhou,Yang Chai

DOI: https://doi.org/10.1002/adfm.201603484

IF: 19

2017-01-01

Advanced Functional Materials

Abstract:Owing to an ultrathin body, atomic scale smoothness, dangling bond-free surface, and sizable bandgap, transistors based on two-dimensional (2D) layered semiconductors show the potential of scalability down to the nanoscale, high-density three-dimensional integration, and superior performance in terms of better electrostatic control and smaller power consumption compared with conventional three-dimensional semiconductors (Si, Ge, and III-V compound materials). To apply 2D layered materials into complementary metal-oxide-semiconductor logic circuits, it is important to modulate the carrier type and density in a controllable manner, and engineer the contact (between metal electrode and 2D semiconductor) and the interface (between dielectrics and semiconducting channel) to get close to their intrinsic carrier mobility. In this review, the most widely studied 2D transition metal dichalcogenides (TMD) are focused on, and an overview of recent progress on doping, contact, and interface engineering of the TMD-based field-effect transistors is provided.
Performance Limits and Advancements in Single 2D Transition Metal Dichalcogenide Transistor

Jing Chen,Ming-Yuan Sun,Zhen-Hua Wang,Zheng Zhang,Kai Zhang,Shuai Wang,Yu Zhang,Xiaoming Wu,Tian-Ling Ren,Hong Liu,Lin Han

DOI: https://doi.org/10.1007/s40820-024-01461-x

2024-08-09

Abstract:Two-dimensional (2D) transition metal dichalcogenides (TMDs) allow for atomic-scale manipulation, challenging the conventional limitations of semiconductor materials. This capability may overcome the short-channel effect, sparking significant advancements in electronic devices that utilize 2D TMDs. Exploring the dimension and performance limits of transistors based on 2D TMDs has gained substantial importance. This review provides a comprehensive investigation into these limits of the single 2D-TMD transistor. It delves into the impacts of miniaturization, including the reduction of channel length, gate length, source/drain contact length, and dielectric thickness on transistor operation and performance. In addition, this review provides a detailed analysis of performance parameters such as source/drain contact resistance, subthreshold swing, hysteresis loop, carrier mobility, on/off ratio, and the development of p-type and single logic transistors. This review details the two logical expressions of the single 2D-TMD logic transistor, including current and voltage. It also emphasizes the role of 2D TMD-based transistors as memory devices, focusing on enhancing memory operation speed, endurance, data retention, and extinction ratio, as well as reducing energy consumption in memory devices functioning as artificial synapses. This review demonstrates the two calculating methods for dynamic energy consumption of 2D synaptic devices. This review not only summarizes the current state of the art in this field but also highlights potential future research directions and applications. It underscores the anticipated challenges, opportunities, and potential solutions in navigating the dimension and performance boundaries of 2D transistors.
Quasi-Zero-Dimensional Source/Drain Contact for Fermi-Level Unpinning in a Tungsten Diselenide (WSe 2 ) Transistor: Approaching Schottky-Mott Limit

Euyjin Park,Seung-Hwan Kim,Seong-Ji Min,Kyu-Hyun Han,Jong-Hyun Kim,Seung-Geun Kim,Tae-Hang Ahn,Hyun-Yong Yu

DOI: https://doi.org/10.1021/acsnano.4c09384

IF: 17.1

2024-10-17

ACS Nano

Abstract:Two-dimensional (2D) transition metal dichalcogenides (TMDCs) known for their exceptional electrical and optical properties have emerged as promising channel materials for next-generation electronics. However, as strong Fermi-level pinning (FLP) between the metal and the 2D TMDC material at the source/drain (S/D) contact decides the Schottky barrier height (SBH), the transistor polarity is fixed to a certain type, which remains a challenge for the 2D TMDC field-effect transistors (FETs). Here, a...

materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology
Fermi-level pinning theory for van der Waals metal-semiconductor junctions

Qian Wang,Yangfan Shao,Penglai Gong,Xingqiang Shi

2019-01-01

Abstract:Metal-two-dimensional (2D) semiconductor junctions with thicknesses-dependent performance have attracted increasing attention very recently. Here, by density functional theory combined with an electrostatic model, we propose that the Fermi-level pinning (FLP) factor depends on layer-number (or thicknesses) of the 2D semiconductor; and an extended FLP theory is presented for van der Waals metal-multilayered semiconductor junctions. Taking MoS2 as a typical example, the extended FLP theory has the following character: Fermi-level pinning exists right at the metal-semiconductor interface, while depinning occurs between MoS2 layers. This depinning effect has several important consequences: 1) the overall pinning effect in metal-multilayered MoS2 junctions is greatly weakened, which explains the new experimental results [Nature 2018, 557, 696]; 2) p-type contact, rarely obtained in metal-monolayer MoS2 junctions, becomes favored in metal-multilayered junctions; 3) type II band alignment (staggered band gap) is realized in MoS2 homojunctions supported on metals, which is useful for optoelectronics. Our extended FLP theory widen the paradigm of FLP and paves a new and universal route for the realization of type II band alignment in van der Waals homojunctions even without doping.
Fermi-level depinning in metal-2D multilayered semiconductor junctions

Qian Wang,Yangfan Shao,Penglai Gong,Xingqiang Shi

DOI: https://doi.org/10.48550/arXiv.1902.06054

2019-10-31

Abstract:Thicknesses-dependent performance of metal-two-dimensional (2D) semiconductor junctions (MSJ) in electronics/optoelectronics have attracted increasing attention, but till present, people have little knowledge about the micro-mechanism of the thicknesses (or layer-number) dependence. Here, by first-principles calculations based on density functional theory, we show that the Fermi-level pinning (FLP) factor of MSJ depends sensitively on the layer-number of few-layer 2D semiconductors, and, an extended FLP theory is proposed for metal-2D multilayered semiconductor junctions (MmSJ). Taking multilayered MoS2 as a typical example for van der Waals (vdW) semiconductor in MmSJ, the extended FLP theory has the following character: strong pinning right at the metal-1st-layer semiconductor interface while depinning occurs between MoS2 layers. This depinning effect between vdW layers has several important consequences: 1) the overall pinning in MmSJ is greatly weakened; 2) p-type contact, rarely obtained in metal-monolayer MoS2 junctions, becomes favored in MmSJ, which is important for CMOS logical devices; 3) depinning between MoS2 layers result in type II band alignment in MoS2 'homojunction' supported on metals, which is useful for optoelectronics. Moreover, our extended FLP theory sheds light on the recent controversial experimental observation and paves a new and universal route to type II band alignment in vdW 'homojunctions'.

Materials Science
Tuning the physical properties of ultrathin transition-metal dichalcogenides via strain engineering

Yalan Yan,Shuang Ding,Xiaonan Wu,Jian Zhu,Dengman Feng,Xiaodong Yang,Fangfei Li

DOI: https://doi.org/10.1039/d0ra07288e

IF: 4.036

2020-01-01

RSC Advances

Abstract:Transition-metal dichalcogenides (TMDs) have become one of the recent frontiers and focuses in two-dimensional (2D) materials fields thanks to their superior electronic, optical, and photoelectric properties. Triggered by the growing demand for developing nano-electronic devices, strain engineering of ultrathin TMDs has become a hot topic in the scientific community. In recent years, both theoretical and experimental research on the strain engineering of ultrathin TMDs have suggested new opportunities to achieve high-performance ultrathin TMDs based devices. However, recent reviews mainly focus on the experimental progress and the related theoretical research has long been ignored. In this review, we first outline the currently employed approaches for introducing strain in ultrathin TMDs, both their characteristics and advantages are explained in detail. Subsequently, the recent research progress in the modification of lattice and electronic structure, and physical properties of ultrathin TMDs under strain are systematically reviewed from both experimental and theoretical perspectives. Despite much work being done in this filed, reducing the distance of experimental progress from the theoretical prediction remains a great challenge in realizing wide applications of ultrathin TMDs in nano-electronic devices.
Recent Progress in Devices and Circuits Based on Wafer-Scale Transition Metal Dichalcogenides.

Hongwei Tang,Haima Zhang,Xinyu Chen,Yin Wang,Xinzhi Zhang,Puyang Cai,Wenzhong Bao

DOI: https://doi.org/10.1007/s11432-019-2651-x

2019-01-01

Science China Information Sciences

Abstract:Two-dimensional layered materials (2DLMs) have triggered a broad research thrust over the last decade worldwide. Different from the gapless graphene, transition metal dichalcogenides (TMDs) exhibit versatile bandstructure, with bandgap sizes ranging from semi-metallic to over 2 eV. Therefore, 2D-TMDs can be utilized in various applications from logic to optoelectronic devices. In this review we first introduce the latest developments of the wafer-scale synthesis of continuous TMD films, then we present recent advances in large scale devices and circuits based on TMD films, including logic, memory, optoelectronic and analog devices. We also provide a perspective and a look at the future device applications based on wafer-scale 2D-TMDs.
Dielectrics for Two-Dimensional Transition-Metal Dichalcogenide Applications

Chit Siong Lau,Sarthak Das,Ivan A. Verzhbitskiy,Ding Huang,Yiyu Zhang,Teymour Talha-Dean,Wei Fu,Dasari Venkatakrishnarao,Kuan Eng Johnson Goh

DOI: https://doi.org/10.1021/acsnano.3c03455

IF: 17.1

2023-06-01

ACS Nano

Abstract:Despite over a decade of intense research efforts, the full potential of two-dimensional transition-metal dichalcogenides continues to be limited by major challenges. The lack of compatible and scalable dielectric materials and integration techniques restrict device performances and their commercial applications. Conventional dielectric integration techniques for bulk semiconductors are difficult to adapt for atomically thin two-dimensional materials. This review provides a brief introduction...

materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology
Transistors and logic circuits enabled by 2D transition metal dichalcogenides: A state-of-the-art survey

Fangsheng Qian,Xiaobo Bu,Junjie Wang,Su-Ting Han,Ye Zhou,Jingyu Mao

DOI: https://doi.org/10.1039/d2tc00964a

IF: 6.4

2022-11-01

Journal of Materials Chemistry C

Abstract:Two-dimensional transition metal dichalcogenides (TMDs) have witnessed scientific research interests in recent years thanks to the absence of dangling bonds, ultrathin-body and two-surface-channel essences, giving rise to an enhanced electrostatic control. The ample properties as well as the choice of materials have immensely broadened the feasibility of advanced transistors and logic circuits with area- and energy-efficient computing in dealing with the ever-increasing data intensive tasks. In this review, we will first examine the promising roadmap for boosting the performance of TMDs FETs, such as doping, contact, and dielectric engineering. Then, multifunctional circuitry applications including fundamental building blocks, reconfigurable integrated circuits and in-memory computing are further discussed. Besides, we will present a perspective of the computing scheme and challenges of current integration technologies. We strongly believe the tremendous progress in TMDs transistors and multifunctional circuits signify upcoming advancements that will start the exciting scenarios of this emerging field.

materials science, multidisciplinary,physics, applied
Two-dimensional transition metal dichalcogenides as atomically thin semiconductors: opportunities and challenges

Xidong Duan,Chen Wang,Anlian Pan,Ruqin Yu,Xiangfeng Duan

DOI: https://doi.org/10.1039/c5cs00507h

2015-12-21

Abstract:The discovery of graphene has ignited intensive interest in two-dimensional layered materials (2DLMs). These 2DLMs represent a new class of nearly ideal 2D material systems for exploring fundamental chemistry and physics at the limit of single-atom thickness, and have the potential to open up totally new technological opportunities beyond the reach of existing materials. In general, there are a wide range of 2DLMs in which the atomic layers are weakly bonded together by van der Waals interactions and can be isolated into single or few-layer nanosheets. The van der Waals interactions between neighboring atomic layers could allow much more flexible integration of distinct materials to nearly arbitrarily combine and control different properties at the atomic scale. The transition metal dichalcogenides (TMDs) (e.g., MoS2, WSe2) represent a large family of layered materials, many of which exhibit tunable band gaps that can undergo a transition from an indirect band gap in bulk crystals to a direct band gap in monolayer nanosheets. These 2D-TMDs have thus emerged as an exciting class of atomically thin semiconductors for a new generation of electronic and optoelectronic devices. Recent studies have shown exciting potential of these atomically thin semiconductors, including the demonstration of atomically thin transistors, a new design of vertical transistors, as well as new types of optoelectronic devices such as tunable photovoltaic devices and light emitting devices. In parallel, there have also been considerable efforts in developing diverse synthetic approaches for the rational growth of various forms of 2D materials with precisely controlled chemical composition, physical dimension, and heterostructure interface. Here we review the recent efforts, progress, opportunities and challenges in exploring the layered TMDs as a new class of atomically thin semiconductors.
Innovations of metallic contacts on semiconducting 2D transition metal dichalcogenides toward advanced 3D-structured field-effect transistors

Byeongchan Kim,Seojoo Lee,Jin-Hong Park

DOI: https://doi.org/10.1039/d4nh00030g

2024-08-19

Abstract:2D semiconductors, represented by transition metal dichalcogenides (TMDs), have the potential to be alternative channel materials for advanced 3D field-effect transistors, such as gate-all-around field-effect-transistors (GAAFETs) and complementary field-effect-transistors (C-FETs), due to their inherent atomic thinness, moderate mobility, and short scaling lengths. However, 2D semiconductors encounter several technological challenges, especially the high contact resistance issue between 2D semiconductors and metals. This review provides a comprehensive overview of the high contact resistance issue in 2D semiconductors, including its physical background and the efforts to address it, with respect to their applicability to GAAFET structures.
Recent advances on liquid intercalation and exfoliation of transition metal dichalcogenides: From fundamentals to applications

Yan Tu,Lingbin Xie,Mengyang Zhang,Shujuan Liu,Zhongzhong Luo,Longlu Wang,Qiang Zhao

DOI: https://doi.org/10.1007/s12274-023-5946-x

IF: 9.9

2023-08-15

Nano Research

Abstract:The weak van der Waals gap endows two dimensional transition metal dichalcogenides (2D TMDs) with the potential to realize guest intercalation and host exfoliation. Intriguingly, the liquid intercalation and exfoliation is a facile, low-cost, versatile and scalable strategy to modulate the structure and physiochemical property of TMDs via introducing foreign species into interlayer. In this review, firstly, we briefly introduce the resultant hybrid superlattice and disperse nanosheets with tailored properties fabricated via liquid intercalation and exfoliation. Subsequently, we systematically analyze the intercalation phenomenon and limitations of various intercalants in chemical or electrochemical methods. Afterwards, we intensely discuss diverse functionalities of resultant materials, focusing on their potential applications in energy conversion, energy storage, water purification, electronics, thermoelectrics and superconductor. Finally, we highlight the challenges and outlooks for precise and mass production of 2D TMDs-based materials via liquid intercalation and exfoliation. This review enriches the overview of liquid intercalation and exfoliation strategy, and paves the path for relevant high-performance devices.

materials science, multidisciplinary,chemistry, physical,physics, applied,nanoscience & nanotechnology
Quasi-Zero-Dimensional Source/Drain Contact for Fermi-Level Unpinning in a Tungsten Diselenide (WSe2) Transistor: Approaching Schottky-Mott Limit

Euyjin Park,Seung-Hwan Kim,Seong-Ji Min,Kyu-Hyun Han,Jong-Hyun Kim,Seung-Geun Kim,Tae-Hang Ahn,Hyun-Yong Yu

DOI: https://doi.org/10.1021/acsnano.4c09384

IF: 17.1

2024-10-29

ACS Nano

Abstract:Two-dimensional (2D) transition metal dichalcogenides (TMDCs) known for their exceptional electrical and optical properties have emerged as promising channel materials for next-generation electronics. However, as strong Fermi-level pinning (FLP) between the metal and the 2D TMDC material at the source/drain (S/D) contact decides the Schottky barrier height (SBH), the transistor polarity is fixed to a certain type, which remains a challenge for the 2D TMDC field-effect transistors (FETs). Here, a S/D contact structure with a quasi-zero-dimensional (quasi-0D) contact interface, in which the dimensionality reduction effect alleviates FLP, was developed to gain controllability over the polarity of the 2D TMDC FET. As a result, conventional metal contacts on the WSe2 FET showed n-type characteristics due to strong FLP (pinning factor of 0.06) near the conduction band, and the proposed quasi-0D contact enabled by the Ag conductive filament on the WSe2 FET exhibited p-type characteristics with a SBH very close to the Schottky-Mott rule (pinning factor of 0.95). Furthermore, modeling of Schottky barriers of conventional contacts, one-dimensional (1D) contacts, and quasi-0D contacts revealed that the SBH of the quasi-0D contact is relatively less subject to interface dipoles that induce FLP, owing to more rapid decaying of dipole energy. The proposed contact in this study provided a method that progressed beyond the alleviation of FLP to achieve controllable polarity. Moreover, reducing the contact dimensionality to quasi-0D will enable high compatibility with the further scaled-down nanoscale device contact structure.
Electrical Contacts to Two-Dimensional Transition-Metal Dichalcogenides

Shuxian Wang,Zhihao Yu,Xinran Wang

DOI: https://doi.org/10.1088/1674-4926/39/12/124001

2018-01-01

Journal of Semiconductors

Abstract:Two-dimensional (2D) transition-metal dichalcogenides (TMDCs) have attracted enormous interests as the novel channel materials for atomically thin transistors. Despite considerable progress in recent years, the transistor performance is largely limited by the excessive contact resistance at the source/drain interface. In this review, a summary of recent progress on improving electrical contact to TMDC transistors is presented. Several important strategies including topology of contacts, choice of metals and interface engineering are discussed.
Electron Transport and Device Physics in Monolayer Transition-Metal Dichalcogenides

Zhihao Yu,Zhun-Yong Ong,Yiming Pan,Tao Xu,Zilu Wang,Litao Sun,Jinlan Wang,Gang Zhang,Yong Wei Zhang,Yi Shi,Xinran Wang

DOI: https://doi.org/10.1109/inec.2016.7589432

2017-01-01

Abstract:Two-dimensional transition-metal dichalcogenides (TMDs) represent a promising class of materials for electronic and photonic devices, benefiting from their sizable bandgap of 1–2eV and ultrathin body. However, one of the major issues is that the experimental mobility is much lower than the theoretical phonon limit. We carry out systematic investigations on the electron transport and field-effect transistors of monolayer TMDs, including MoS 2 and WS 2 . We find that the major extrinsic mobility limiting factors are charged impurities, traps and point defects. We develop a facile low-temperature thiol chemistry to repair the sulfur vacancies and improve the interface quality, resulting in significant reduction of the charged impurities and traps. In combination with high-k dielectrics, we are able to achieve room-temperature mobility of ∼150cm 2 /Vs and 83cm 2 /Vs for monolayer MoS 2 and WS 2 , respectively. We further develop a theoretical model to quantitatively correlate these extrinsic scattering sources to measured electrical data. Our study shows that interface engineering is critical for high-performance transistors based on 2D semiconductors.
Recent progress on fabrication and flat-band physics in 2D transition metal dichalcogenides moiré superlattices

Xinyu Huang,Xu Han,Yunyun Dai,Xiaolong Xu,Jiahao Yan,Mengting Huang,Pengfei Ding,Decheng Zhang,Hui Chen,Vijay Laxmi,Xu Wu,Liwei Liu,Yeliang Wang,Yang Xu,Yuan Huang

DOI: https://doi.org/10.1088/1674-4926/44/1/011901

2023-02-02

Journal of Semiconductors

Abstract:Moiré superlattices are formed when overlaying two materials with a slight mismatch in twist angle or lattice constant. They provide a novel platform for the study of strong electronic correlations and non-trivial band topology, where emergent phenomena such as correlated insulating states, unconventional superconductivity, and quantum anomalous Hall effect are discovered. In this review, we focus on the semiconducting transition metal dichalcogenides (TMDs) based moiré systems that host intriguing flat-band physics. We first review the exfoliation methods of two-dimensional materials and the fabrication technique of their moiré structures. Secondly, we overview the progress of the optically excited moiré excitons, which render the main discovery in the early experiments on TMD moiré systems. We then introduce the formation mechanism of flat bands and their potential in the quantum simulation of the Hubbard model with tunable doping, degeneracies, and correlation strength. Finally, we briefly discuss the challenges and future perspectives of this field.

physics, condensed matter
Quantum Dot Behavior in Transition Metal Dichalcogenides Nanostructures

Gang Luo,Zhuo‐Zhi Zhang,Hai-Ou Li,Xiang‐Xiang Song,Guangwei Deng,Gang Cao,Ming Xiao,Guo-Ping Guo

DOI: https://doi.org/10.1007/s11467-017-0652-3

2017-01-01

Frontiers of Physics

Abstract:Recently, transition metal dichalcogenides (TMDCs) semiconductors have been utilized for investigating quantum phenomena because of their unique band structures and novel electronic properties. In a quantum dot (QD), electrons are confined in all lateral dimensions, offering the possibility for detailed investigation and controlled manipulation of individual quantum systems. Beyond the definition of graphene QDs by opening an energy gap in nanoconstrictions, with the presence of a bandgap, gate-defined QDs can be achieved on TMDCs semiconductors. In this paper, we review the confinement and transport of QDs in TMDCs nanostructures. The fabrication techniques for demonstrating two-dimensional (2D) materials nanostructures such as field-effect transistors and QDs, mainly based on e-beam lithography and transfer assembly techniques are discussed. Subsequently, we focus on transport through TMDCs nanostructures and QDs. With steady improvement in nanoscale materials characterization and using graphene as a springboard, 2D materials offer a platform that allows creation of heterostructure QDs integrated with a variety of crystals, each of which has entirely unique physical properties.
A perspective on the doping of transition metal dichalcogenides for ultra-scaled transistors: Challenges and opportunities

Rehan Younas,Guanyu Zhou,Christopher L. Hinkle

DOI: https://doi.org/10.1063/5.0133064

IF: 4

2023-04-17

Applied Physics Letters

Abstract:To support the ever-growing demand for faster, energy-efficient computation, more aggressive scaling of the transistor is required. Two-dimensional (2D) transition metal dichalcogenides (TMDs), with their ultra-thin body, excellent electrostatic gate control, and absence of surface dangling bonds, allow for extreme scaling of the channel region without compromising the mobility. New device geometries, such as stacked nanosheets with multiple parallel channels for carrier flow, can facilitate higher drive currents to enable ultra-fast switches, and TMDs are an ideal candidate for that type of next generation front-end-of-line field effect transistor (FET). TMDs are also promising for monolithic 3D (M3D) integrated back-end-of-line FETs due to their ability to be grown at low temperature and with less regard to lattice matching through van der Waals (vdW) epitaxy. To achieve TMD FETs with superior performance, two important challenges must be addressed: (1) complementary n- and p-type FETs with small and reliable threshold voltages are required for the reduction of dynamic and static power consumption per logic operation, and (2) contact resistance must be reduced significantly. We present here the underlying strengths and weaknesses of the wide variety of methods under investigation to provide scalable, stable, and controllable doping. It is our Perspective that of all the available doping methods, substitutional doping offers the ultimate solution for TMD-based transistors.

physics, applied

Fermi-level depinning of 2D transition metal dichalcogenide transistors

Fermi Level Pinning Dependent 2D Semiconductor Devices: Challenges and Prospects

Fermi Level Depinning in Two-Dimensional Materials Using a Fluorinated Bilayer Graphene Barrier

Doping, Contact and Interface Engineering of Two-Dimensional Layered Transition Metal Dichalcogenides Transistors

Performance Limits and Advancements in Single 2D Transition Metal Dichalcogenide Transistor

Quasi-Zero-Dimensional Source/Drain Contact for Fermi-Level Unpinning in a Tungsten Diselenide (WSe 2 ) Transistor: Approaching Schottky-Mott Limit

Fermi-level pinning theory for van der Waals metal-semiconductor junctions

Fermi-level depinning in metal-2D multilayered semiconductor junctions

Tuning the physical properties of ultrathin transition-metal dichalcogenides via strain engineering

Recent Progress in Devices and Circuits Based on Wafer-Scale Transition Metal Dichalcogenides.

Dielectrics for Two-Dimensional Transition-Metal Dichalcogenide Applications

Transistors and logic circuits enabled by 2D transition metal dichalcogenides: A state-of-the-art survey

Two-dimensional transition metal dichalcogenides as atomically thin semiconductors: opportunities and challenges

Innovations of metallic contacts on semiconducting 2D transition metal dichalcogenides toward advanced 3D-structured field-effect transistors

Recent advances on liquid intercalation and exfoliation of transition metal dichalcogenides: From fundamentals to applications

Quasi-Zero-Dimensional Source/Drain Contact for Fermi-Level Unpinning in a Tungsten Diselenide (WSe2) Transistor: Approaching Schottky-Mott Limit

Electrical Contacts to Two-Dimensional Transition-Metal Dichalcogenides

Electron Transport and Device Physics in Monolayer Transition-Metal Dichalcogenides

Recent progress on fabrication and flat-band physics in 2D transition metal dichalcogenides moiré superlattices

Quantum Dot Behavior in Transition Metal Dichalcogenides Nanostructures

A perspective on the doping of transition metal dichalcogenides for ultra-scaled transistors: Challenges and opportunities