Abstract:This study demonstrates both low‐resistance contacts and extension doping for p‐type monolayer WSe2 field‐effect transistors. The insertion of an amorphous monolayer WOxSey under evaporated metal contacts reduces the contact resistance by over an order of magnitude, achieving a low value of 1.2 ± 0.3 kΩ μm for monolayer WSe2. A short‐channel monolayer WSe2 transistor with doped extensions reaches a maximum drain current of 154 μA μm−1 with a high on/off ratio of 107. Source/Drain extension doping is crucial for minimizing the series resistance of the ungated channel and reducing the contact resistance of field‐effect transistors (FETs) in complementary metal–oxide–semiconductor (CMOS) technology. 2D semiconductors, such as MoS2 and WSe2, are promising channel materials for beyond‐silicon CMOS. A key challenge is to achieve extension doping for 2D monolayer FETs without damaging the atomically thin material. This work demonstrates extension doping with low‐resistance contacts for monolayer WSe2 p‐FETs. Self‐limiting oxidation transforms a bilayer WSe2 into a hetero‐bilayer of a high‐work‐function WOxSey on a monolayer WSe2. Then, damage‐free nanolithography defines an undoped nano‐channel, preserving the high on‐current of WOxSey‐doped FETs while significantly improving their on/off ratio. The insertion of an amorphous WOxSey interlayer under the contacts achieves record‐low contact resistances for monolayer WSe2 over a hole density range of 1012 to 1013 cm−2 (1.2 ± 0.3 kΩ μm at 1013 cm−2). The WOxSey‐doped extension exhibits a sheet resistance as low as 10 ± 1 kΩ □−1. Monolayer WSe2 p‐FETs with sub‐50 nm channel lengths reach a maximum drain current of 154 μA μm−1 with an on/off ratio of 107–108. These results define strategies for nanometer‐scale selective‐area doping in 2D FETs and other 2D architectures.

Hole mobility enhancement in monolayer WSe2 p-type transistors through molecular doping

Hole Doping In Epitaxial Mose2 Monolayer By Nitrogen Plasma Treatment

High-Performance p-Type Quasi-Ohmic of WSe2 Transistors Using Vanadium-Doped WSe2 as Intermediate Layer Contact

High Performance WSe2 Field-Effect Transistors via Controlled Formation of In-Plane Heterojunctions

Low Resistance Ohmic Contact to P-type Monolayer WSe2

Unipolar P-Type Monolayer WSe2 Field-Effect Transistors with High Current Density and Low Contact Resistance Enabled by Van Der Waals Contacts

High‐performance solution‐processed 2D p‐type WSe2 transistors and circuits through molecular doping

Atomically Controlled Tunable Doping in High Performance WSe2 Devices

Degenerate electron-doping in two-dimensional tungsten diselenide with a dimeric organometallic reductant

High-performance N-Type Transistors Based on CVD-grown Large-Domain Trilayer WSe2

Se-Vacancy Healing with Substitutional Oxygen in WSe2 for High-Mobility p-Type Field-Effect Transistors

Optimized Electrical Properties of P-Type Field-Effect Transistors Based on WSe2 Grown at Moderate Temperatures

Intralayer/Interlayer Codoping Stabilizes Polarity Modulation in 2D Semiconductors for Scalable Electronics

High-performance n-type transistors based on CVD-grown large-domain trilayer WSe 2

Controllable P-type doping and improved conductance of few-layer WSe2 via Lewis acid

Tunable Transfer Behaviors of Single-Layer Wse2 Field Effect Transistors by Hydrazine

Extension Doping with Low‐Resistance Contacts for P‐Type Monolayer WSe2 Field‐Effect Transistors

Controlling phase transition in WSe2 towards ideal n-type transistor

High-Fidelity Transfer of 2D Semiconductors and Electrodes for Van Der Waals Devices

Selective Electron Beam Patterning of Oxygen-Doped WSe2 for Seamless Lateral Junction Transistors

Anisotropic Carrier Mobility from 2H WSe2