Abstract:Monolayer WSe2 is a two dimensional (2D) semiconductor with a direct bandgap, and it has been recently explored as a promising material for electronics and optoelectronics. Low field effect mobility is the main constraint preventing WSe2 from becoming one of the competing channel materials for field-effect transistors (FETs). Recent results have demonstrated that chemical treatments can modify the electrical properties of transition metal dichalcogenides (TMDCs) including MoS2 and WSe2. Here, we report that controlled heating in air significantly improves device performance of WSe2 FETs in terms of on-state currents and field-effect mobilities. Specifically, after heating at optimized conditions, chemical vapor deposition grown monolayer WSe2 FETs showed an average FET mobility of 31 cm2/Vs and on/off current ratios up to 5*108. For few-layer WSe2 FETs, after the same treatment applied, we achieved a high mobility up to 92 cm2/Vs. These values are significantly higher than FETs fabricated using as-grown WSe2 flakes without heating treatment, demonstrating the effectiveness of air heating on the performance improvements of WSe2 FETs. The underlying chemical processes involved during air heating and the formation of in-plane heterojunctions of WSe2 and WO3-x, which is believed to be the reason for the improved FET performance, were studied by spectroscopy and transmission electron microscopy. We further demonstrated that by combining air heating method developed in this work with supporting 2D materials on BN substrate, we achieved a noteworthy field effect mobility of 83 cm2/Vs for monolayer WSe2 FETs. This work is a step towards controlled modification of the properties of WSe2 and potentially other TMDCs, and may greatly improve device performance for future applications of 2D materials in electronics and optoelectronics.

Tunable Transfer Behaviors of Single-Layer Wse2 Field Effect Transistors by Hydrazine

Hole mobility enhancement in monolayer WSe2 p-type transistors through molecular doping

Adjustable Hydrazine Modulation of Single-Wall Carbon Nanotube Network Field Effect Transistors from P-Type to N-Type

Various and Tunable Transport Properties of Wse2 Transistor Formed by Metal Contacts

Atomically Controlled Tunable Doping in High Performance WSe2 Devices

Controlling phase transition in WSe2 towards ideal n-type transistor

Precisely Controllable N-Type Doping in MoTe2 Field Effect Transistors by Hydrazine Treatment

Tunable Snse2/Wse2 Heterostructure Tunneling Field Effect Transistor

A ferroelectric relaxor polymer-enhanced p-type WSe2 transistor

Controllable P-type doping and improved conductance of few-layer WSe2 via Lewis acid

High Performance WSe2 Field-Effect Transistors via Controlled Formation of In-Plane Heterojunctions

Lateral 2D WSe2 p-n Homojunction Formed by Efficient Charge-Carrier-Type Modulation for High-Performance Optoelectronics

Selective Electron Beam Patterning of Oxygen-Doped WSe2 for Seamless Lateral Junction Transistors

Controlled Doping of Wafer‐Scale PtSe2 Films for Device Application

Degenerate electron-doping in two-dimensional tungsten diselenide with a dimeric organometallic reductant

Controllable Doping Characteristics for WSxSey Monolayers Based on the Tunable S/Se Ratio.

Robust n-type doping of WSe2 enabled by controllable proton irradiation

Chemical Trend of Transition-Metal Doping in WSe2

The Ambipolar Evolution of a High-Performance WSe2 Transistor Assisted by a Ferroelectric Polymer.

Tunable electronic properties and Schottky barrier in a graphene/WSe 2 heterostructure under out-of-plane strain and an electric field.

Electron and Hole Mobilities in Single-Layer WSe2