Abstract:2D field-effect transistors (FETs) fabricated with transition metal dichalcogenide (TMD) materials are a potential replacement for the silicon-based CMOS. However, the lack of advancement in p-type contact is also a key factor hindering TMD-based CMOS applications. The less investigated path towards improving electrical characteristics based on contact geometries with low contact resistance (RC) has also been established. Moreover, finding contact metals to reduce the RC is indeed one of the significant challenges in achieving the above goal. Our research provides the first comparative analysis of the three contact configurations for a WSe2 monolayer with different noble metals (Rh, Ru, and Pd) by employing ab initio density functional theory (DFT) and non-equilibrium Green's function (NEGF) methods. From the perspective of the contact topologies, the RC and minimum subthreshold slope (SSMIN) of all the conventional edge contacts are outperformed by the novel non-van der Waals (vdW) sandwich contacts. These non-vdW sandwich contacts reveal that their RC values are below 50 Ω∙μm, attributed to the narrow Schottky barrier widths (SBWs) and low Schottky barrier heights (SBHs). Not only are the RC values dramatically reduced by such novel contacts, but the SSMIN values are lower than 68 mV/dec. The new proposal offers the lowest RC and SSMIN, irrespective of the contact metals. Further considering the metal leads, the WSe2/Rh FETs based on the non-vdW sandwich contacts show a meager RC value of 33 Ω∙μm and an exceptional SSMIN of 63 mV/dec. The two calculated results present the smallest-ever values reported in our study, indicating that the non-vdW sandwich contacts with Rh leads can attain the best-case scenario. In contrast, the symmetric convex edge contacts with Pd leads cause the worst-case degradation, yielding an RC value of 213 Ω∙μm and an SSMIN value of 95 mV/dec. While all the WSe2/Ru FETs exhibit medium performances, the minimal shift in the transfer curves is interestingly advantageous to the circuit operation. Conclusively, the low-RC performances and the desirable SSMIN values are a combination of the contact geometries and metal leads. This innovation, achieved through noble metal leads in conjunction with the novel contact configurations, paves the way for a TMD-based CMOS with ultra-low RC and rapid switching speeds.

Low Contact Resistance WSe 2 p -Type Transistors with Highly Stable, CMOS-Compatible Dopants

Low Resistance Ohmic Contact to P-type Monolayer WSe2

Low Resistance Contact to P-Type Monolayer WSe2

High-Performance Contact-Doped WSe2 Transistors Using TaSe2 Electrodes.

Atomically Controlled Tunable Doping in High Performance WSe2 Devices

High-Performance p-Type Quasi-Ohmic of WSe2 Transistors Using Vanadium-Doped WSe2 as Intermediate Layer Contact

High-performance multilayer WSe2 p-type field effect transistors with Pd contacts for circuit applications

Unipolar P-Type Monolayer WSe2 Field-Effect Transistors with High Current Density and Low Contact Resistance Enabled by Van Der Waals Contacts

Extension Doping with Low‐Resistance Contacts for P‐Type Monolayer WSe2 Field‐Effect Transistors

Controlling phase transition in WSe2 towards ideal n-type transistor

Improvements in 2D p-type WSe2 transistors towards ultimate CMOS scaling

High-Performance MoS2 Field-Effect Transistors Enabled by Chloride Doping: Record Low Contact Resistance (0.5 kohm*um) and Record High Drain Current (460 uA/um)

Ambipolar and Robust WSe<sub>2</sub> Field-Effect Transistors Utilizing Self-Assembled Edge Oxides

P-type electrical contacts for two-dimensional transition metal dichalcogenides

Ultralow contact resistance between semimetal and monolayer semiconductors

Impact of Rh, Ru, and Pd Leads and Contact Topologies on Performance of WSe2 FETs: A First Comparative Ab Initio Study

Quasi-Zero-Dimensional Source/Drain Contact for Fermi-Level Unpinning in a Tungsten Diselenide (WSe2) Transistor: Approaching Schottky-Mott Limit

Multi-Layer Palladium Diselenide as a Contact Material for Two-Dimensional Tungsten Diselenide Field-Effect Transistors

Degenerate electron-doping in two-dimensional tungsten diselenide with a dimeric organometallic reductant

High-Performance WSe 2 Top-Gate Devices with Strong Spacer Doping

Recessed-Channel WSe2 Field-Effect Transistor via Self-Terminated Doping and Layer-by-Layer Etching