Abstract:Monolayer WSe2 is a two dimensional (2D) semiconductor with a direct bandgap, and it has been recently explored as a promising material for electronics and optoelectronics. Low field effect mobility is the main constraint preventing WSe2 from becoming one of the competing channel materials for field-effect transistors (FETs). Recent results have demonstrated that chemical treatments can modify the electrical properties of transition metal dichalcogenides (TMDCs) including MoS2 and WSe2. Here, we report that controlled heating in air significantly improves device performance of WSe2 FETs in terms of on-state currents and field-effect mobilities. Specifically, after heating at optimized conditions, chemical vapor deposition grown monolayer WSe2 FETs showed an average FET mobility of 31 cm2/Vs and on/off current ratios up to 5*108. For few-layer WSe2 FETs, after the same treatment applied, we achieved a high mobility up to 92 cm2/Vs. These values are significantly higher than FETs fabricated using as-grown WSe2 flakes without heating treatment, demonstrating the effectiveness of air heating on the performance improvements of WSe2 FETs. The underlying chemical processes involved during air heating and the formation of in-plane heterojunctions of WSe2 and WO3-x, which is believed to be the reason for the improved FET performance, were studied by spectroscopy and transmission electron microscopy. We further demonstrated that by combining air heating method developed in this work with supporting 2D materials on BN substrate, we achieved a noteworthy field effect mobility of 83 cm2/Vs for monolayer WSe2 FETs. This work is a step towards controlled modification of the properties of WSe2 and potentially other TMDCs, and may greatly improve device performance for future applications of 2D materials in electronics and optoelectronics.

High-Performance WSe 2 Top-Gate Devices with Strong Spacer Doping

High Mobility 2D Palladium Diselenide Field-Effect Transistors with Tunable Ambipolar Characteristics.

Atomically Controlled Tunable Doping in High Performance WSe2 Devices

High-Performance Contact-Doped WSe2 Transistors Using TaSe2 Electrodes.

Low Resistance Ohmic Contact to P-type Monolayer WSe2

Tungsten Diselenide Top-gate Transistors with Multilayer Antimonene Electrodes: Gate Stacks and Epitaxially Grown 2D Material Heterostructures

Low Resistance Contact to P-Type Monolayer WSe2

High-Performance Two-Dimensional Electronics with a Noncontact Remote Doping Method

High-Performance p-Type Quasi-Ohmic of WSe2 Transistors Using Vanadium-Doped WSe2 as Intermediate Layer Contact

Unipolar P-Type Monolayer WSe2 Field-Effect Transistors with High Current Density and Low Contact Resistance Enabled by Van Der Waals Contacts

Low Contact Resistance WSe 2 p -Type Transistors with Highly Stable, CMOS-Compatible Dopants

Reliable doping technique for WSe<inf>2</inf> by W:Ta co-sputtering process

Hysteresis-Free Contact Doping for High-Performance Two-Dimensional Electronics

Tunable Snse2/Wse2 Heterostructure Tunneling Field Effect Transistor

Controlling phase transition in WSe2 towards ideal n-type transistor

High‐performance solution‐processed 2D p‐type WSe2 transistors and circuits through molecular doping

Controllable p-type Doping of 2D WSe2 via Vanadium Substitution

High Performance WSe2 Field-Effect Transistors via Controlled Formation of In-Plane Heterojunctions

Controllable Doping in 2D Layered Materials

Degenerate electron-doping in two-dimensional tungsten diselenide with a dimeric organometallic reductant

Hole mobility enhancement in monolayer WSe2 p-type transistors through molecular doping