Abstract:Two-dimensional (2D) materials with the atomically thin thickness have attracted great interest in the postMoore's Law era because of their tremendous potential to continue transistor downscaling and offered advances in device performance at the atomic limit. However, the metal-semi-conductor contact is the bottleneck in field-effect transistors (FETs) integrating 2D semiconductors as channel materials. A robust and tunable doping method at the source and drain region of 2D transistors to minimize the contact resistance is highly sought after. Here we report a stable carrier doping method via the mild covalent grafting of maleimides on the surface of 2D transition metal dichalcogenides. The chemisorbed interaction contributes to the efficient carrier doping without degrading the high-performance carrier transport. Density functional theory results further illustrate that the molecular functionalization leads to the mild hybridization and the negligible impact on the conduction bands of monolayer MoS2, avoiding the random scattering from the dopants. Differently from reported molecular treatments, our strategy displays high thermal stability (above 300 degrees C) and it is compatible with micro/nano processing technology. The contact resistance of MoS2 FETs can be greatly reduced by similar to 12 times after molecular functionalization. The Schottky barrier of 44 meV is achieved on monolayer MoS2 FETs, demonstrating efficient charge injection between metal and 2D semiconductor. The mild covalent functionalization of molecules on 2D semiconductors represents a powerful strategy to perform the carrier doping and the device optimization.

Hysteresis-Free Contact Doping for High-Performance Two-Dimensional Electronics

Enhanced contact resistance reduction in MoS2 transistors via ultrathin LiPON electrode interface doping

Doping for ohmic contacts in 2D transistors

High-Performance Two-Dimensional Electronics with a Noncontact Remote Doping Method

A Novel Contact Engineering Method for Transistors Based on Two-Dimensional Materials

Yttrium-induced phase-transition technology for forming perfect ohmic contact in two-dimensional MoS2 transistors

A "click" Reaction to Engineer MoS2 Field-Effect Transistors with Low Contact Resistance.

Contact Optimisation Strategy for Wafer-Scale Field-Effect Transistors Based on Two-Dimensional Semiconductors

High-Performance Contact-Doped WSe2 Transistors Using TaSe2 Electrodes.

P-type electrical contacts for two-dimensional transition metal dichalcogenides

Atomically Controlled Tunable Doping in High Performance WSe2 Devices

Doping, Contact and Interface Engineering of Two-Dimensional Layered Transition Metal Dichalcogenides Transistors

Tunable Doping of Rhenium and Vanadium into Transition Metal Dichalcogenides for Two-Dimensional Electronics

Tunable Doping of Rhenium and Vanadium into Transition Metal Dichalcogenides for Two‐Dimensional Electronics

Engineering Interfacial Charge Transfer through Modulation Doping for 2D Electronics

Chemical Synthesis and Integration of Highly Conductive PdTe2 with Low‐Dimensional Semiconductors for P‐type Transistors with Low Contact Barriers

Chemical Synthesis and Integration of Highly Conductive PdTe 2 with Low‐Dimensional Semiconductors for p‐Type Transistors with Low Contact Barriers

H2S assisted contact engineering: a universal approach to enhance hole conduction in all TMD Field-Effect Transistors and achieve ambipolar CVD MoS2 Transistors

Improving Electric Contacts to Two-Dimensional Semiconductors

Contact Engineering for Two-Dimensional Semiconductors

Electrochemical Construction of Edge‐Contacted Metal‐Semiconductor Junctions with Low Contact Barrier