Abstract:Advanced beyond-silicon electronic technology requires both channel materials and also ultralow-resistance contacts to be discovered<a href="/articles/s41586-021-03472-9#ref-CR1">1</a>,<a href="/articles/s41586-021-03472-9#ref-CR2">2</a>. Atomically thin two-dimensional semiconductors have great potential for realizing high-performance electronic devices<a href="/articles/s41586-021-03472-9#ref-CR1">1</a>,<a href="/articles/s41586-021-03472-9#ref-CR3">3</a>. However, owing to metal-induced gap states (MIGS)<a href="#ref-CR4">4</a>,<a href="#ref-CR5">5</a>,<a href="#ref-CR6">6</a>,<a href="/articles/s41586-021-03472-9#ref-CR7">7</a>, energy barriers at the metal–semiconductor interface—which fundamentally lead to high contact resistance and poor current-delivery capability—have constrained the improvement of two-dimensional semiconductor transistors so far<a href="/articles/s41586-021-03472-9#ref-CR2">2</a>,<a href="/articles/s41586-021-03472-9#ref-CR8">8</a>,<a href="/articles/s41586-021-03472-9#ref-CR9">9</a>. Here we report ohmic contact between semimetallic bismuth and semiconducting monolayer transition metal dichalcogenides (TMDs) where the MIGS are sufficiently suppressed and degenerate states in the TMD are spontaneously formed in contact with bismuth. Through this approach, we achieve zero Schottky barrier height, a contact resistance of 123 ohm micrometres and an on-state current density of 1,135 microamps per micrometre on monolayer MoS2; these two values are, to the best of our knowledge, the lowest and highest yet recorded, respectively. We also demonstrate that excellent ohmic contacts can be formed on various monolayer semiconductors, including MoS2, WS2 and WSe2. Our reported contact resistances are a substantial improvement for two-dimensional semiconductors, and approach the quantum limit. This technology unveils the potential of high-performance monolayer transistors that are on par with state-of-the-art three-dimensional semiconductors, enabling further device downscaling and extending Moore's law.

Doping for ohmic contacts in 2D transistors

Yttrium-doping-induced metallization of molybdenum disulfide for ohmic contacts in two-dimensional transistors

Yttrium-induced phase-transition technology for forming perfect ohmic contact in two-dimensional MoS2 transistors

Hysteresis-Free Contact Doping for High-Performance Two-Dimensional Electronics

Enhanced contact resistance reduction in MoS2 transistors via ultrathin LiPON electrode interface doping

Atomically Controlled Tunable Doping in High Performance WSe2 Devices

Doping, Contact and Interface Engineering of Two-Dimensional Layered Transition Metal Dichalcogenides Transistors

Controlled Fabrication of Metallic MoO2 Nanosheets Towards High-Performance P-Type 2D Transistors.

A "click" Reaction to Engineer MoS2 Field-Effect Transistors with Low Contact Resistance.

P-type electrical contacts for two-dimensional transition metal dichalcogenides

Engineering Interfacial Charge Transfer through Modulation Doping for 2D Electronics

Contact-induced doping in aluminum-contacted molybdenum disulfide

A Single‐Crystal Antimony Trioxide Dielectric for 2D Field‐Effect Transistors

Tunable Doping of Rhenium and Vanadium into Transition Metal Dichalcogenides for Two-Dimensional Electronics

Precise P-Type and N-Type Doping of Two-Dimensional Semiconductors for Monolithic Integrated Circuits

Contact Optimisation Strategy for Wafer-Scale Field-Effect Transistors Based on Two-Dimensional Semiconductors

Pushing the Performance Limit of Sub-100 nm Molybdenum Disulfide Transistors.

Controllable Doping in 2D Layered Materials

Ultralow contact resistance between semimetal and monolayer semiconductors

High-performance p-type field-effect transistors using substitutional doping and thickness control of two-dimensional materials

High-Performance Contact-Doped WSe2 Transistors Using TaSe2 Electrodes.