Abstract:Two-dimensional (2D) transition-metal dichalcogenides (TMDCs) are regarded as promising materials for next-generation logic circuits. Top gate field-effect transistors (FETs) have independent gate control ability and can be fabricated directly on TMDC materials without a transfer process. Therefore, it has the merits of device reliability and complementary metal-oxide semiconductor (CMOS) process compatibility, which are demanded in practical circuit-level integration. However, the fabrication of the top gate FET involves depositing an insulating dielectric layer and a gate electrode in sequence on the TMDC channel material, which may affect the device performance. Insightfully investigating the influences of different top-gate-deposition methods on the electrical properties of the TMDC channel and further harnessing these influences to realize a homogeneous CMOS device on an identical 2D TMDC platform are with practice significance. In this work, p/n-type controllable top gate FET arrays based on 2H-MoTe2 are fabricated by using different top-gate-deposition methods. The electron-beam evaporation (EBE) of top metal gate exhibits an obvious n-doping effect on the 2H-MoTe2 channel and converts it from p-type to n-type, whereas the thermal evaporation of top gate affects little to the channel. High-resolution transmission electron microscopy (HR-TEM) analysis reveals that the high-energy metal atoms from the EBE process can penetrate through the 30 nm gate dielectric layers (including 10 nm Al2O3 seeding layer), leading to multiple atomic defects in both MoTe2 and the interface between MoTe2 and Al2O3. Furthermore, by utilizing the top gate engineering, a large-scale double-top-gate MoTe2 homogeneous CMOS inverter array is fabricated. The CMOS inverters exhibit clear logic swing, negligible hysteresis, and high device yield (∼93%), indicating high device reliability and stability. Notably, the fabrication process is facile, free from transfer procedure, and compatible with traditional silicon technology. This work promotes the application of 2D TMDCs in nanoelectronics integration.

Precise P-Type and N-Type Doping of Two-Dimensional Semiconductors for Monolithic Integrated Circuits

Realizing Stable P-Type Transporting in Two-Dimensional WS2 Films.

Fabrication of p-type 2D single-crystalline transistor arrays with Fermi-level-tuned van der Waals semimetal electrodes

Spatially controlled doping of two-dimensional SnS 2 through intercalation for electronics

P/N-Type Conversion of 2D MoTe2 Controlled by Top Gate Engineering for Logic Circuits

Engineering Top Gate Stack for Wafer-Scale Integrated Circuit Fabrication Based on Two-Dimensional Semiconductors

Intralayer/Interlayer Codoping Stabilizes Polarity Modulation in 2D Semiconductors for Scalable Electronics

Switchable and Reversible p+/n+ Doping in 2D Semiconductors by Ionic 2D Minerals

P‐Type 2D Semiconductors for Future Electronics

Versatile Post-Doping toward Two-Dimensional Semiconductors

Engineering Interfacial Charge Transfer through Modulation Doping for 2D Electronics

Wafer-Scale Synthesis of WS2 Films with in Situ Controllable P-Type Doping by Atomic Layer Deposition

Wafer-Scale Synthesis of WS 2 Films with In Situ Controllable p-Type Doping by Atomic Layer Deposition

Van der Waals polarity-engineered 3D integration of 2D complementary logic

Intergranular Diffusion‐Assisted Liquid‐Phase Chemical Vapor Deposition for Wafer‐Scale Synthesis of Patternable 2D Semiconductors

Controlled Synthesis and Accurate Doping of Wafer‐Scale Two‐Dimensional Semiconducting Transition Metal Dichalcogenides

Heterogeneous Integration of Atomically Thin Semiconductors for Non-von Neumann CMOS

Controllable Doping in 2D Layered Materials

Large‐Scale N‐Type FET and Homogeneous CMOS Inverter Array Based on Few‐Layer MoTe2

Doping, Contact and Interface Engineering of Two-Dimensional Layered Transition Metal Dichalcogenides Transistors

High-Performance CMOS Inverter Array with Monolithic 3D Architecture Based on CVD-Grown N-Mos2 and P-Mote2.