Van der Waals polarity-engineered 3D integration of 2D complementary logic

Yimeng Guo,Jiangxu Li,Xuepeng Zhan,Chunwen Wang,Min Li,Biao Zhang,Zirui Wang,Yueyang Liu,Kaining Yang,Hai Wang,Wanying Li,Pingfan Gu,Zhaoping Luo,Yingjia Liu,Peitao Liu,Bo Chen,Kenji Watanabe,Takashi Taniguchi,Xing-Qiu Chen,Chengbing Qin,Jiezhi Chen,Dongming Sun,Jing Zhang,Runsheng Wang,Jianpeng Liu,Yu Ye,Xiuyan Li,Yanglong Hou,Wu Zhou,Hanwen Wang,Zheng Han

DOI: https://doi.org/10.1038/s41586-024-07438-5

IF: 64.8

2024-05-30

Nature

Abstract:Vertical three-dimensional integration of two-dimensional (2D) semiconductors holds great promise, as it offers the possibility to scale up logic layers in the z axis 1,2,3 . Indeed, vertical complementary field-effect transistors (CFETs) built with such mixed-dimensional heterostructures 4,5 , as well as hetero-2D layers with different carrier types 6,7,8 , have been demonstrated recently. However, so far, the lack of a controllable doping scheme (especially p-doped WSe 2 (refs. 9,10,11,12,13,14,15,16,17 ) and MoS 2 (refs. 11,18,19,20,21,22,23,24,25,26,27,28 )) in 2D semiconductors, preferably in a stable and non-destructive manner, has greatly impeded the bottom-up scaling of complementary logic circuitries. Here we show that, by bringing transition metal dichalcogenides, such as MoS 2 , atop a van der Waals (vdW) antiferromagnetic insulator chromium oxychloride (CrOCl), the carrier polarity in MoS 2 can be readily reconfigured from n- to p-type via strong vdW interfacial coupling. The consequential band alignment yields transistors with room-temperature hole mobilities up to approximately 425 cm 2 V −1 s −1 , on/off ratios reaching 10 6 and air-stable performance for over one year. Based on this approach, vertically constructed complementary logic, including inverters with 6 vdW layers, NANDs with 14 vdW layers and SRAMs with 14 vdW layers, are further demonstrated. Our findings of polarity-engineered p- and n-type 2D semiconductor channels with and without vdW intercalation are robust and universal to various materials and thus may throw light on future three-dimensional vertically integrated circuits based on 2D logic gates.

multidisciplinary sciences

What problem does this paper attempt to address?

The main problem that this paper attempts to solve is to achieve controllable doping of two - dimensional semiconductor materials (such as MoS₂) through van der Waals (vdW) interface coupling, thereby realizing vertical three - dimensional integrated complementary logic circuits. Specifically, the main challenges faced by the researchers include:

1. **Controllable Doping of Two - Dimensional Semiconductor Materials**: Traditional doping methods are difficult to achieve stable and efficient p - type doping in two - dimensional materials, which limits the development of complementary logic circuits based on two - dimensional materials. The paper proposes a method of reconfiguring the carrier polarity of MoS₂ from n - type to p - type by placing transition metal dichalcogenides (such as MoS₂) on vdW antiferromagnetic insulator chromium oxychloride (CrOCl) and using strong vdW interface coupling.

2. **Improving the Performance of Two - Dimensional Field - Effect Transistors (FETs)**: The p - type MoS₂ field - effect transistors prepared by the above method exhibit a hole mobility of up to approximately 425 cm² V⁻¹ s⁻¹ at room temperature, a switching ratio of 10⁶, and are stable in air for more than 1 year. These performance indicators are crucial for practical applications.

3. **Realizing Vertically Three - Dimensional Integrated Complementary Logic Circuits**: Based on the above doping strategy, the researchers constructed vertically stacked complementary logic units, including 6 - layer vdW - structured inverters, 14 - layer vdW - structured NAND gates and SRAMs. The successful preparation of these devices demonstrates the potential of vertical three - dimensional integration technology in increasing circuit integration density.

In summary, by solving the problem of controllable doping of two - dimensional semiconductor materials, this paper provides new possibilities for future high - performance, high - density three - dimensional integrated circuits.