Yimeng Guo,Jiangxu Li,Xuepeng Zhan,Chunwen Wang,Min Li,Biao Zhang,Zirui Wang,Yueyang Liu,Kaining Yang,Hai Wang,Wanying Li,Pingfan Gu,Zhaoping Luo,Yingjia Liu,Peitao Liu,Bo Chen,Kenji Watanabe,Takashi Taniguchi,Xing-Qiu Chen,Chengbing Qin,Jiezhi Chen,Dongming Sun,Jing Zhang,Runsheng Wang,Jianpeng Liu,Yu Ye,Xiuyan Li,Yanglong Hou,Wu Zhou,Hanwen Wang,Zheng Han

Abstract:Vertical three-dimensional integration of two-dimensional (2D) semiconductors holds great promise, as it offers the possibility to scale up logic layers in the z axis 1,2,3 . Indeed, vertical complementary field-effect transistors (CFETs) built with such mixed-dimensional heterostructures 4,5 , as well as hetero-2D layers with different carrier types 6,7,8 , have been demonstrated recently. However, so far, the lack of a controllable doping scheme (especially p-doped WSe 2 (refs. 9,10,11,12,13,14,15,16,17 ) and MoS 2 (refs. 11,18,19,20,21,22,23,24,25,26,27,28 )) in 2D semiconductors, preferably in a stable and non-destructive manner, has greatly impeded the bottom-up scaling of complementary logic circuitries. Here we show that, by bringing transition metal dichalcogenides, such as MoS 2 , atop a van der Waals (vdW) antiferromagnetic insulator chromium oxychloride (CrOCl), the carrier polarity in MoS 2 can be readily reconfigured from n- to p-type via strong vdW interfacial coupling. The consequential band alignment yields transistors with room-temperature hole mobilities up to approximately 425 cm 2 V −1 s −1 , on/off ratios reaching 10 6 and air-stable performance for over one year. Based on this approach, vertically constructed complementary logic, including inverters with 6 vdW layers, NANDs with 14 vdW layers and SRAMs with 14 vdW layers, are further demonstrated. Our findings of polarity-engineered p- and n-type 2D semiconductor channels with and without vdW intercalation are robust and universal to various materials and thus may throw light on future three-dimensional vertically integrated circuits based on 2D logic gates.

Pass‐transistor Logic Circuits Based on Wafer‐Scale Two‐Dimensional Semiconductors

Pass‐Transistor Logic Circuits Based on Wafer‐Scale 2D Semiconductors (Adv. Mater. 48/2022)

Analog and Logic Circuits Fabricated on a Wafer-Scale Two-Dimensional Semiconductor

Top Gate Engineering of Field-Effect Transistors Based on Wafer-Scale Two-Dimensional Semiconductors

Integrated circuits based on bilayer MoS₂ transistors.

Integrated Logic Circuits Based on Wafer-Scale 2D-MoS2 FETs Using Buried-Gate Structures

Integrated Circuits Based on Bilayer MoS2 Transistors

Engineering Top Gate Stack for Wafer-Scale Integrated Circuit Fabrication Based on Two-Dimensional Semiconductors

High-Performance Wafer-Scale MoS2 Transistors Toward Practical Application

Wafer-scale functional circuits based on two dimensional semiconductors with fabrication optimized by machine learning

Large-scale Chemical Assembly of Atomically Thin Transistors and Circuits

Chemical assembly of atomically thin transistors and circuits in a large scale

High-Performance Top-Gated Monolayer Sns2 Field-Effect Transistors and Their Integrated Logic Circuits

Synergistic Engineering of Top Gate Stack for Low Hysteresis 2D MoS2 Transistors

Van der Waals polarity-engineered 3D integration of 2D complementary logic

Wafer‐Scale Demonstration of MBC‐FET and C‐FET Arrays Based on Two‐Dimensional Semiconductors

Modifying the Power and Performance of 2-Dimensional MoS 2 Field Effect Transistors

Scaling of MoS 2 Transistors and Inverters to Sub-10 nm Channel Length with High Performance

High-current MoS2 Transistors with Non-Planar Gate Configuration.

Two-dimensional Semiconductor Integrated Circuits Operating at Gigahertz Frequencies

High-Performance Logic and Memory Devices Based on a Dual-Gated MoS2 Architecture