Abstract:We herein demonstrate, for the first time, transparent, flexible, and large-area monolithic MoS2 transistors and logic gates. Each single transistor consists of only two components: a monolithic chemical vapor deposition-grown MoS2 and an ion gel. Additional electrode materials are not required. The uniqueness of the device configuration is attributed to two factors. One is that a MoS2 layer is a semiconductor, but it can be doped degenerately; monolithic MoS2 can thus serve as both the electrodes and the channel of a transistor via selective doping of the material at certain positions. The other is the use of an electrolyte gate dielectric that permits effective gating (<3 V) even from an electrode coplanar with the channel. The resulting monolithic MoS2 transistors yield excellent device performance, including a maximum mobility of 1.5 cm2/V s, an on-off ratio of 105, and a turn-on voltage of -0.69 V. This unique transistor architecture was successfully applied to various semiconductors such as ReS2 and indium-gallium-zinc oxide. Furthermore, the presented devices exhibit excellent mechanical, operational, and environmental stabilities. Fabrication of complex logic circuits (NOT, NAND, and NOR gates) by integration of the monolithic MoS2 transistors is demonstrated. Finally, the monolithic MoS2 transistor was connected to drive red, green, and blue light-emitting diode pixels, which yielded high luminance at a low voltage (<3 V). We believe that the unique architecture of the devices provides a facile way for low-cost, flexible, and high-performance two-dimensional electronics.

Analog and Logic Circuits Fabricated on a Wafer-Scale Two-Dimensional Semiconductor

Pass‐transistor Logic Circuits Based on Wafer‐Scale Two‐Dimensional Semiconductors

High mobility top gated field-effect transistors and integrated circuits based on chemical vapor deposition-derived monolayer MoS 2

Top Gate Engineering of Field-Effect Transistors Based on Wafer-Scale Two-Dimensional Semiconductors

Integrated Logic Circuits Based on Wafer-Scale 2D-MoS2 FETs Using Buried-Gate Structures

Pass‐Transistor Logic Circuits Based on Wafer‐Scale 2D Semiconductors (Adv. Mater. 48/2022)

Integrated Circuits Based on Bilayer MoS2 Transistors

High-Performance Wafer-Scale MoS2 Transistors Toward Practical Application

Large-scale 2D Electronics based on Single-layer MoS2 Grown by Chemical Vapor Deposition

High-Performance Logic and Memory Devices Based on a Dual-Gated MoS2 Architecture

Wafer-scale functional circuits based on two dimensional semiconductors with fabrication optimized by machine learning

Selectively Metallized 2D Materials for Simple Logic Devices

Evolution Application of Two-Dimensional MoS2-Based Field-Effect Transistors

Scaling of MoS 2 Transistors and Inverters to Sub-10 nm Channel Length with High Performance

Realizing Wafer‐Scale and Low‐Voltage Operation MoS2 Transistors Via Electrolyte Gating

Engineering Top Gate Stack for Wafer-Scale Integrated Circuit Fabrication Based on Two-Dimensional Semiconductors

Novel 10-Nm Gate Length MoS2 Transistor Fabricated on Si Fin Substrate

Field-Effect Transistors Based on Two-Dimensional Materials for Logic Applications

Feasibility of Large-Scale MoS2 Thin-Film Transistors on a GaN Substrate

Wafer‐Scale Demonstration of MBC‐FET and C‐FET Arrays Based on Two‐Dimensional Semiconductors

High-Performance CVD MoS2 Transistors with Self-Aligned Top-Gate and Bi Contact