Abstract:This study investigates double‐gate chemical vapor deposition (CVD)‐grown monolayer molybdenum disulfide (1L‐MoS2) field‐effect‐transistors (FETs) and elucidates the mechanisms for improvements compared to single top‐gated devices. It also reports on the impact of equivalent oxide thickness (EOT) scaling on subthreshold swing (SS) and gate hysteresis towards EOT ∼1 nm as dictated by semiconductor technology roadmaps for future beyond‐Si CMOS nodes. 2D layered semiconductors have attracted considerable attention for beyond‐Si complementary metal‐oxide‐semiconductor (CMOS) technologies. They can be prepared into ultrathin channel materials toward ultrascaled device architectures, including double‐gate field‐effect‐transistors (DGFETs). This work presents an experimental analysis of DGFETs constructed from chemical vapor deposition (CVD)‐grown monolayer (1L) molybdenum disulfide (MoS2) with atomic layer deposition (ALD) of hafnium oxide (HfO2) high‐k gate dielectrics (top and bottom). This extends beyond previous studies of DGFETs based mostly on exfoliated (few‐nm thick) MoS2 flakes, and advances toward large‐area wafer‐scale processing. Here, significant improvements in performance are obtained with DGFETs (i.e., improvements in ON/OFF ratio, ON‐state current, sub‐threshold swing, etc.) compared to single top‐gate FETs. In addition to multi‐gate device architectures (e.g., DGFETs), the scaling of the equivalent oxide thickness (EOT) is crucial toward improved electrostatics required for next‐generation transistors. However, the impact of EOT scaling on the characteristics of CVD‐grown MoS2 DGFETs remains largely unexplored. Thus, this work studies the impact of EOT scaling on subthreshold swing (SS) and gate hysteresis using current–voltage (I–V) measurements with varying sweep rates. The experimental analysis and results elucidate the basic mechanisms responsible for improvements in CVD‐grown 1L‐MoS2 DGFETs compared to standard top‐gate FETs.

Realizing Wafer‐Scale and Low‐Voltage Operation MoS2 Transistors Via Electrolyte Gating

High mobility top gated field-effect transistors and integrated circuits based on chemical vapor deposition-derived monolayer MoS 2

MoS(2 )transistor Gated by PMMA-based Electrolyte for Sub-1 V Operation

Top Gate Engineering of Field-Effect Transistors Based on Wafer-Scale Two-Dimensional Semiconductors

High-Performance Wafer-Scale MoS2 Transistors Toward Practical Application

High-Performance Logic and Memory Devices Based on a Dual-Gated MoS2 Architecture

MoS2transistors gated by ferroelectric HfZrO2with MoS2/mica heterojunction interface

Integrated Logic Circuits Based on Wafer-Scale 2D-MoS2 FETs Using Buried-Gate Structures

High-Performance CVD MoS2 Transistors with Self-Aligned Top-Gate and Bi Contact

Multifunctional MoS2 Transistors with Electrolyte Gel Gating.

Analog and Logic Circuits Fabricated on a Wafer-Scale Two-Dimensional Semiconductor

Gate Induced Metal-Insulator Transition in MoS2 by Solid Superionic Conductor LaF3.

Wafer-scale Transferred Multilayer MoS2 for High Performance Field Effect Transistors

Large capacitance and fast polarization response of thin electrolyte dielectrics by spin coating for two-dimensional MoS 2 devices

Strain-Gated Field Effect Transistor of a MoS2-ZnO 2D-1D Hybrid-Structure.

Toward High-mobility and Low-power 2D MoS2 Field-effect Transistors

Novel Field-Effect Schottky Barrier Transistors Based on Graphene-MoS2 Heterojunctions

Ultrathin All‐Solid‐State MoS2‐Based Electrolyte Gated Synaptic Transistor with Tunable Organic–Inorganic Hybrid Film

MoS2 Field-Effect Transistors with Lead Zirconate-Titanate Ferroelectric Gating

Analysis and EOT Scaling on Top‐ and Double‐Gate 2D CVD‐Grown Monolayer MoS2 FETs

Pass‐transistor Logic Circuits Based on Wafer‐Scale Two‐Dimensional Semiconductors