Abstract:In this paper, a near-ideal subthreshold swing MoS2 back-gate transistor with an optimized ultrathin HfO2 dielectric layer is reported with detailed physical and electrical characteristics analyses. Ultrathin (10 nm) HfO2 films created by atomic-layer deposition (ALD) at a low temperature with rapid-thermal annealing (RTA) at different temperatures from 200 degrees C to 800 degrees C have a great effect on the electrical characteristics, such as the subthreshold swing (SS), on-to-off current (I-ON/I-OFF ) ratio, etc, of the MoS2 devices. Physical examinations are performed, including x-ray diffraction, atomic force microscopy, and electrical experiments of metal-oxidesemiconductor capacitance-voltage. The results demonstrate a strong correlation between the HfO2 dielectric RTA temperature and the film characteristics, such as film density, crystallization degree, grain size and surface states, inducing a variation in the electrical parameters, such as the leakage, D-it, equivalent oxide thickness, SS, and I-ON, as well as I-ON/I-OFF of the MoS2 field effect transistors with the same channel materials and fabrication methods. With a balance between the crystallization degree and the surface state, the ultrathin (10 nm) HfO2 gate dielectric RTA at 500 degrees C is demonstrated to have the best performance with a field effect mobility of 40 cm(2) V-1 s(-1) and the lowest SS of 77.6 mV(-1) decade, which are superior to those of the control samples at other temperatures. The excellent transistor results with an optimized industry-based HfO2 ALD and RTA process provide a promising approach for MoS2 applications into the scaling of the nanoscale CMOS process.

Large capacitance and fast polarization response of thin electrolyte dielectrics by spin coating for two-dimensional MoS 2 devices

Realizing Wafer‐Scale and Low‐Voltage Operation MoS2 Transistors Via Electrolyte Gating

MoS(2 )transistor Gated by PMMA-based Electrolyte for Sub-1 V Operation

Mobility enhancement and highly efficient gating of monolayer MoS2 transistors with Polymer Electrolyte

Improved Integration of Ultra-Thin High-K Dielectrics in Few-Layer Mos2 Fet by Remote Forming Gas Plasma Pretreatment

High-mobility patternable MoS2 percolating nanofilms

A Single‐Crystal Antimony Trioxide Dielectric for 2D Field‐Effect Transistors

Low power flexible monolayer MoS2 integrated circuits

Toward High-mobility and Low-power 2D MoS2 Field-effect Transistors

High-Performance Wafer-Scale MoS2 Transistors Toward Practical Application

Large-scale and stacked transfer of bilayers MoS2 devices on a flexible polyimide substrate

Large-scale and stacked transfer of bilayers MoS2devices on a flexible polyimide substrate

A "click" Reaction to Engineer MoS2 Field-Effect Transistors with Low Contact Resistance.

Electrolyte-Gated Flexible MoS 2 Synaptic Transistors with Short-term Plasticity

Near-Ideal Subthreshold Swing Mos2 Back-Gate Transistors With An Optimized Ultrathin Hfo2 Dielectric Layer

Enhancing the Performance of MoS2 Field-Effect Transistors Using Self-Assembled Monolayers: A Promising Strategy to Alleviate Dielectric Layer Scattering and Improve Device Performance

Optoelectronic Properties of Few-Layer MoS2 FET Gated by Ferroelectric Relaxor Polymer.

MoS2transistors gated by ferroelectric HfZrO2with MoS2/mica heterojunction interface

Enhanced contact resistance reduction in MoS2 transistors via ultrathin LiPON electrode interface doping

Wafer-scale Transferred Multilayer MoS2 for High Performance Field Effect Transistors

Scalable high performance radio frequency electronics based on large domain bilayer MoS2