Abstract:Molybdenum disulfide (MoS2), a member of the transition-metal dichalcogenides (TMDs) family, is a semiconducting layered matierial consisting of two atomic layers of S atoms and Mo atoms. Comparing with semimetal graphene, its relatively large band gap makes MoS2 more suitable for applications in logic cricuit. Besides, strong spin orbit coupling and special symmetric structure give MoS2 many intriguing physical and chemical properties. However, contacts between metals and MoS2 remain a critical issue which hinders not only the investigation of the intrinsic properties of MoS2 but also its applications. Therefore, it is urgent to find the technique that can improve the contact condition between metal and MoS2. In this work, using MoO3/Au as the electrode of MoS2 based field effect transistors (FETs), we obtained N-type MoS2 FETs with improved contact conditions. The transport properties of these devices at different temperatures is also investigated. We demonstrated that the Schottky contact of the MoS2 FETs can be well improved by the interlayer MoO3 between MoS2 and metal electrodes: for device with 2 nm thick channel MoS2, the room temperature mobility can be as high as 25 cm2 V–1 s–1, 16 times higher than device without MoO3 contact; for device with 8 nm thick channel MoS2, the highest value of the low temperature mobility is as high as 100 cm2 V–1 s–1. Therefore, we extracted the intrinsic low temperature property of MoS2 FETs: the transport property of few layer MoS2 devices is dominated by the scattering of charge carriers from defect or charge traps; such scattering is weakened as the carrier density increases and screening is improved. The technique demonstrated in this work can also be applied to other TMDs field effect devices.

Mobility enhancement and highly efficient gating of monolayer MoS2 transistors with Polymer Electrolyte

High mobility top gated field-effect transistors and integrated circuits based on chemical vapor deposition-derived monolayer MoS 2

Enhancement of Carrier Mobility in Mos2 Field Effect Transistors by A Sio2 Protective Layer

Electrical characterization of MoS2 field-effect transistors with different dielectric polymer gate

Enhancing the Performance of MoS2 Field-Effect Transistors Using Self-Assembled Monolayers: A Promising Strategy to Alleviate Dielectric Layer Scattering and Improve Device Performance

Toward High-mobility and Low-power 2D MoS2 Field-effect Transistors

Large capacitance and fast polarization response of thin electrolyte dielectrics by spin coating for two-dimensional MoS 2 devices

Highly Efficient Charge Transport in a Quasi‐Monolayer Semiconductor on Pure Polymer Dielectric

Extremely high mobility over 5000 cm2/Vs obtained from MoS2 nanosheet transistor with NiOx Schottky gate

MoS(2 )transistor Gated by PMMA-based Electrolyte for Sub-1 V Operation

Transport Properties of MoO&lt;sub&gt;3&lt;/sub&gt; Contacted Few-Layer MoS&lt;sub&gt;2&lt;/sub&gt; N-type Field-Effect Transistor

High Mobility Ambipolar MoS2 Field-Effect Transistors: Substrate and Dielectric Effects

The Integration of Sub-10 Nm Gate Oxide on Mos2 with Ultra Low Leakage and Enhanced Mobility

Wafer-scale Transferred Multilayer MoS2 for High Performance Field Effect Transistors

Multifunctional MoS2 Transistors with Electrolyte Gel Gating.

Performance and stability improvement of CVD monolayer MoS2 transistors through HfO2 dielectrics engineering

P-type polar transition of chemically doped multilayer MoS2 transistor

Transport Properties Of Moo3 Contacted Few-Layer Mos2 N-Type Field-Effect Transistor

Realizing Wafer‐Scale and Low‐Voltage Operation MoS2 Transistors Via Electrolyte Gating

Polymer Electrolyte Blend Gate Dielectrics for High-Performance Ultrathin Organic Transistors: Toward Favorable Polymer Blend Miscibility and Reliability

A "click" Reaction to Engineer MoS2 Field-Effect Transistors with Low Contact Resistance.