Abstract:A novel ultra‐low power consumption strain sensor by using dendritic bilayer MoS2 with reduced contact resistance (5.4 kΩ μm). The sensor offers high sensitivity, high resolution (0.04%), and minimal power consumption (33 pW), making it ideal for wearable and flexible electronics in health monitoring applications. Two‐dimensional transition metal dichalcogenides (2D TMDs) are promising as sensing materials for flexible electronics and wearable systems in artificial intelligence, tele‐medicine, and internet of things (IoT). Currently, the study of 2D TMDs‐based flexible strain sensors mainly focuses on improving the performance of sensitivity, response, detection resolution, cyclic stability, and so on. There are few reports on power consumption despite that it is of significant importance for wearable electronic systems. It is still challenging to effectively reduce the power consumption for prolonging the endurance of electronic systems. Herein, we propose a novel approach to realize ultra‐low power consumption strain sensors by reducing the contact resistance between metal electrodes and 2D MoS2. A dendritic bilayer MoS2 has been designed and synthesized by a modified CVD method. Large‐area edge contact has been introduced in the dendritic MoS2, resulting in decreased the contact resistance significantly. The contact resistance can be down to 5.4 kΩ μm, which is two orders of magnitude lower than the conventional MoS2 devices. We fabricate a flexible strain sensor, exhibiting superior sensitivity in detecting strains with high resolution (0.04%) and an ultra‐low power consumption (33.0 pW). This study paves the way for future wearable and flexible sensing electronics with high sensitivity and ultra‐low power consumption.

Low power flexible monolayer MoS2 integrated circuits

Large-scale flexible and transparent electronics based on monolayer molybdenum disulfide field-effect transistors

High-Performance, Highly Bendable MoS2 Transistors with High-K Dielectrics for Flexible Low-Power Systems

Monolayer Molybdenum Disulfide Transistors with Single-Atom-Thick Gates.

Toward High-mobility and Low-power 2D MoS2 Field-effect Transistors

High‐Performance Flexible Multilayer MoS2 Transistors on Solution‐Based Polyimide Substrates

Few-layer Molybdenum Disulfide Transistors and Circuits for High-Speed Flexible Electronics

High-Performance Wafer-Scale MoS2 Transistors Toward Practical Application

Sub-5 Nm Monolayer MoS2 Transistors Toward Low-Power Devices

Low-power MoS2 metal–semiconductor field effect transistors (MESFETs) based on standard metal–semiconductor contact

Sub-5 nm Monolayer MoS 2 Transistors toward Low-Power Devices

Large-scale and stacked transfer of bilayers MoS2devices on a flexible polyimide substrate

High-Performance Flexible Nanoscale Field-Effect Transistors Based on Transition Metal Dichalcogenides

Ultra‐low power consumption flexible sensing electronics by dendritic bilayer MoS2

Scaling of MoS 2 Transistors and Inverters to Sub-10 nm Channel Length with High Performance

Wafer-Scale Growth and Transfer of High-Quality MoS2 Array by Interface Design for High-Stability Flexible Photosensitive Device

Scaling of MoS2 Transistors and Inverters to Sub-10 Nm Channel Length with High Performance

Integrated circuits based on bilayer MoS₂ transistors.

Monolayer MoS2-based Transistors with Low Contact Resistance by Inserting Ultrathin Al2O3 Interfacial Layer

Wafer-Scale Oxygen-Doped MoS2 Monolayer.

Sub-10 Nm Monolayer MoS2 Transistors Using Single-Walled Carbon Nanotubes As an Evaporating Mask