Abstract:In this paper, a near-ideal subthreshold swing MoS2 back-gate transistor with an optimized ultrathin HfO2 dielectric layer is reported with detailed physical and electrical characteristics analyses. Ultrathin (10 nm) HfO2 films created by atomic-layer deposition (ALD) at a low temperature with rapid-thermal annealing (RTA) at different temperatures from 200 degrees C to 800 degrees C have a great effect on the electrical characteristics, such as the subthreshold swing (SS), on-to-off current (I-ON/I-OFF ) ratio, etc, of the MoS2 devices. Physical examinations are performed, including x-ray diffraction, atomic force microscopy, and electrical experiments of metal-oxidesemiconductor capacitance-voltage. The results demonstrate a strong correlation between the HfO2 dielectric RTA temperature and the film characteristics, such as film density, crystallization degree, grain size and surface states, inducing a variation in the electrical parameters, such as the leakage, D-it, equivalent oxide thickness, SS, and I-ON, as well as I-ON/I-OFF of the MoS2 field effect transistors with the same channel materials and fabrication methods. With a balance between the crystallization degree and the surface state, the ultrathin (10 nm) HfO2 gate dielectric RTA at 500 degrees C is demonstrated to have the best performance with a field effect mobility of 40 cm(2) V-1 s(-1) and the lowest SS of 77.6 mV(-1) decade, which are superior to those of the control samples at other temperatures. The excellent transistor results with an optimized industry-based HfO2 ALD and RTA process provide a promising approach for MoS2 applications into the scaling of the nanoscale CMOS process.

Flexible High-Temperature MoS 2 Field-Effect Transistors and Logic Gates

High mobility top gated field-effect transistors and integrated circuits based on chemical vapor deposition-derived monolayer MoS 2

Temperature-switching Logic in MoS 2 Single Transistors

High-Temperature Performance of MoS2 Thin-Film Transistors: DC and Pulse Current-Voltage Characteristics

Improved Thermal Dissipation in a MoS 2 Field-Effect Transistor by Hybrid High- k Dielectric Layers

High-Performance Wafer-Scale MoS2 Transistors Toward Practical Application

Low power flexible monolayer MoS2 integrated circuits

Ultra-Steep-Slope High-Gain MoS2 Transistors with Atomic Threshold-Switching Gate

Top Gate Engineering of Field-Effect Transistors Based on Wafer-Scale Two-Dimensional Semiconductors

Pass‐transistor Logic Circuits Based on Wafer‐Scale Two‐Dimensional Semiconductors

MoS2transistors gated by ferroelectric HfZrO2with MoS2/mica heterojunction interface

Ultra‐Steep‐Slope High‐Gain MoS <sub>2</sub> Transistors with Atomic Threshold‐Switching Gate

Evolution Application of Two-Dimensional MoS2-Based Field-Effect Transistors

All‐Transfer Electrode Interface Engineering Toward Harsh‐Environment‐Resistant MoS<sub>2</sub> Field‐Effect Transistors (Adv. Mater. 18/2023)

Analog and Logic Circuits Fabricated on a Wafer-Scale Two-Dimensional Semiconductor

MoS2 Transistors Operating at Gigahertz Frequencies

A Single‐Crystal Antimony Trioxide Dielectric for 2D Field‐Effect Transistors

Highly Robust Flexible Ferroelectric Field Effect Transistors Operable at High Temperature with Low‐Power Consumption

Near-Ideal Subthreshold Swing Mos2 Back-Gate Transistors With An Optimized Ultrathin Hfo2 Dielectric Layer

Monolayer MoS 2 Synaptic Transistors for High-Temperature Neuromorphic Applications

MoS2high temperature sensitive element with a single Si3N4protective layer