Abstract:Electrical stability and field-effect mobility of two-dimensional (2D) material-based field-effect transistors (FETs) are extremely important for practical electronic applications. Interface scattering during the transmission of 2D materials, which can be significantly influenced by the interface between dielectric and 2D materials, remains a formidable challenge. Early work has achieved excellent mobility and on/off ratio, but the understanding and improvement of the electrical stability of MoS2 devices are still in their infancy. Herein, a facile and effective strategy is proposed via a spin-coated polymethyl methacrylate (PMMA) dual layer to enhance both field-effect mobility and electrical stability of molybdenum disulfide (MoS2) FETs, in which the PMMA underneath MoS2 works as a gate dielectric together with SiO2 and the PMMA on top of MoS2 is used to protect the FET channel from exposure to air. The field-effect electron mobility has been improved up to 2.5 times, from 41.8 to 104.6 cm(2)/Vs, by using PMMA/SiO2 as the back gate dielectric and PMMA capsulation layer. The time- and stress-dependent electrical stability has been essentially improved. A negligible threshold voltage shift (Delta Vth < 0.1 V) and field-effect mobility degradation (1.4%) are achieved upon a gate bias voltage of +/- 35 V applied for 300 s, even after 45 day storage in open air. The effective suppression of interface impurities located at the channel interface contributes to the electrical performance enhancement of MoS2 FETs. Furthermore, a theoretical model was developed to investigate different MoS2/dielectric interface structures by density functional theory (DFT), which is consistent with interface scattering theory. This study not only provides a clue for the high-performance 2D FET fabrication but also offers an opportunity to understand the electrical property degradation mechanism of the 2D material family devices, pushing forward their practical applications in the 2D devices and flexible electronics.

Improved Thermal Dissipation in a MoS 2 Field-Effect Transistor by Hybrid High- k Dielectric Layers

Improved Thermal Dissipation in a MoS2 Field-Effect Transistor by Hybrid High-k Dielectric Layers

Effect of Dielectric Interface on the Performance of MoS2 Transistors.

Construction of High Field-Effect Mobility Multilayer MoS2 Field-Effect Transistors with Excellent Stability Through Interface Engineering

Self-Heating Effect in a MoS2 Field-Effect Transistor and Improved Heat Dissipation by the BN Capping Layer

Enhancement of Thermal Boundary Conductance Between MoS2 and Dielectric Layer by Self‐Assembled Monolayers

Performance and stability improvement of CVD monolayer MoS2 transistors through HfO2 dielectrics engineering

High-Performance Wafer-Scale MoS2 Transistors Toward Practical Application

Gate Stack Engineering in MoS2 Field‐Effect Transistor for Reduced Channel Doping and Hysteresis Effect

A "click" Reaction to Engineer MoS2 Field-Effect Transistors with Low Contact Resistance.

Thermal Management in MoS2 Based Integrated Device Using Near-Field Radiation

Near-Ideal Subthreshold Swing Mos2 Back-Gate Transistors With An Optimized Ultrathin Hfo2 Dielectric Layer

Improved performance in MoS2 homogeneous junction field effect transistors by optimizing electrodes contact

Gate Stack Engineering in MoS 2 Field‐Effect Transistor for Reduced Channel Doping and Hysteresis Effect

Toward High-mobility and Low-power 2D MoS2 Field-effect Transistors

Impact of the Channel Length on Molybdenum Disulfide Field Effect Transistors with Hafnia-Based High-K Dielectric Gate

Monolayer Molybdenum Disulfide Transistors with Scaling Dielectric Equivalent Oxide Thickness

Improved Integration of Ultra-Thin High-K Dielectrics in Few-Layer Mos2 Fet by Remote Forming Gas Plasma Pretreatment

Improving electron mobility in MoS 2 field-effect transistors by optimizing the interface contact and enhancing the channel conductance through local structural phase transition

Transport Properties of MoO&lt;sub&gt;3&lt;/sub&gt; Contacted Few-Layer MoS&lt;sub&gt;2&lt;/sub&gt; N-type Field-Effect Transistor

Evolution Application of Two-Dimensional MoS2-Based Field-Effect Transistors