Abstract:Abstract We deposited high-quality molybdenum disulfide (MoS 2 ) monolayer and multilayer crystals on SiO 2 /Si substrates, by means of a chemical vapor deposition (CVD) process at atmospheric pressure. Notably, NaCl salt was used as component of the precursors to assist the growth of MoS 2 crystals, which were intended for use as the active channel layer in the fabrication of field-effect transistors (FETs). The resulting MoS 2 crystals from this CVD process were analyzed by optical, scanning electron, and atomic force microscopies, and by Raman and photoluminescence spectroscopies. The optical images and the micrographs obtained by SEM revealed the formation of dispersed MoS 2 crystals with a triangular shape all over the SiO 2 surface. The thickness of the MoS 2 crystals, analyzed by atomic force microscopy, showed minimum values of around 0.7 nm, confirming the formation of monolayers. Additionally, multilayers with larger thickness were also identified. The Raman and photoluminescence spectra of the MoS 2 crystals corroborated the formation of single and multiple layers. The fabrication of the FET back-SiO 2 -gate configuration was made by depositing patterned source and drain Ti contacts on the dispersed MoS 2 crystals to achieve the Ti/MoS 2 /SiO 2 /Si layer stacks. MoS 2 -based FETs with one and three layers were assembled and their electrical response analyzed by I–V output and transfer curves showing the typical characteristics of an n -type semiconductor channel operating in depletion mode. The electrical performance parameters of the devices, such as mobility and threshold voltage, were also determined from this analysis. Finally, to enhance their electrical response, the MoS 2 -based devices were thermally annealed at 200 °C for 30 min in Ar atmosphere. The increase in the mobility of the device was 176% compared to the device before the treatment.

Electrical Characterization of Back-Gated Bi-Layer MoS2 Field-Effect Transistors and the Effect of Ambient on Their Performances

The Effect of a Vacuum Environment on the Electrical Properties of a MoS2 Back-Gate Field Effect Transistor

Atmospheric Degradation and Performance Recovery of Two‐dimensional MoS2 Field Effect Transistor

Performance and stability improvement of CVD monolayer MoS2 transistors through HfO2 dielectrics engineering

Electrothermal transport induced material reconfiguration and performance degradation of CVD-grown monolayer MoS2 transistors

Environmental Effects on Hysteresis of Transfer Characteristics in Molybdenum Disulfide Field-Effect Transistors

Laser Annealing Towards High-Performance Monolayer MoS2 and WSe2 Field Effect Transistors.

Influence of vacuum thermal annealing and air exposure on the performance of single-layer MoS 2 devices

Abnormal Device Performance in Transferred Multilayer MoS2 Field-Effect Transistors

Atmospheric Degradation and Performance Recovery of <scp>Two‐Dimensional MoS<sub>2</sub></scp> Field Effect Transistor<sup>†</sup>

Effect of Thickness and Thermal Treatment on the Electrical Performance of 2D MoS2 Monolayer and Multilayer Field-Effect Transistors

Improved Thermal Dissipation in a MoS 2 Field-Effect Transistor by Hybrid High- k Dielectric Layers

Transport Properties of MoO&lt;sub&gt;3&lt;/sub&gt; Contacted Few-Layer MoS&lt;sub&gt;2&lt;/sub&gt; N-type Field-Effect Transistor

Dramatic Switching Behavior in Suspended MoS2 Field-Effect Transistors

Probing the Field-Effect Transistor with Monolayer MoS2 Prepared by APCVD

Effect of Dielectric Interface on the Performance of MoS2 Transistors.

Enhanced Electrical Properties Of Lithography-Free Fabricated Mos2 Field Effect Transistors With Chromium Contacts

Transport Properties Of Moo3 Contacted Few-Layer Mos2 N-Type Field-Effect Transistor

Near-Ideal Subthreshold Swing Mos2 Back-Gate Transistors With An Optimized Ultrathin Hfo2 Dielectric Layer

High-Temperature Performance of MoS2 Thin-Film Transistors: DC and Pulse Current-Voltage Characteristics

Enhanced Electrical Properties of Lithography-Free Fabricated MoS<sub>2</sub> Field Effect Transistors with Chromium Contacts