Abstract:Abstract Device and material reliability of 2-dimensional materials, especially CVD-grown MoS 2 , has remained un-addressed since 2011 when the first TMDC transistor was reported. For its potential application in next generation electronics, it is imperative to update our understanding of mechanisms through which MoS 2 transistors’ performance degrades under long-term electrical stress. We report, for CVD-grown monolayer MoS 2 , results on temporal degradation of material and device performance under electrical stress. Both low and high field regimes of operation are explored at different temperatures, gate bias and stress cycles. During low field operation, current is found to saturate after hundreds of seconds of operation with the current decay time constant being a function of temperature and stress cycle. High field operation, especially at low temperature, leads to impact ionization assisted material and device degradation. It is found that high field operation at low temperature results in amorphization of the channel and is verified by device and kelvin probe force microscopy (KPFM) analyses. In general, a prolonged room temperature operation of CVD-grown MoS 2 transistors lead to degraded gate control, higher OFF state current and negative shift in threshold voltage (V T ). This is further verified, through micro-Raman and photoluminescence spectroscopy, which suggest that a steady state DC electrical stress leads to the formation of localized low resistance regions in the channel and a subsequent loss of transistor characteristics. Our findings unveil unique mechanism by which CVD MoS 2 undergoes material degradation under electrical stress and subsequent breakdown of transistor behavior. Such an understanding of material and device reliability helps in determining the safe operating regime from device as well as circuit perspective.

Atmospheric Degradation and Performance Recovery of Two‐dimensional MoS2 Field Effect Transistor

Atmospheric Degradation and Performance Recovery of <scp>Two‐Dimensional MoS<sub>2</sub></scp> Field Effect Transistor<sup>†</sup>

Natural Overlaying Behaviors Push the Limit of Planar Cyclic Deformation Performance in Few‐layer MoS2 Nanosheets

Atomistic insight into the oxidation of monolayer transition metal dichalcogenides: from structures to electronic properties

Electrical Characterization of Back-Gated Bi-Layer MoS2 Field-Effect Transistors and the Effect of Ambient on Their Performances

Optimization of Defects in Large-Area Synthetic MoS2 Thin Films by CS2 Treatment for Switching and Sensing Devices

Environmental Stability of 2D Transition Metal Dichalcogenides

Two-step Chemical Vapor Deposition Synthesis of NiTe2-MoS2 Vertical Junctions with Improved MoS2 Transistor Performance.

Suppression of the Charge Density Wave State in Two-Dimensional 1T-TiSe 2 by Atmospheric Oxidation.

High-Performance Wafer-Scale MoS2 Transistors Toward Practical Application

Electrothermal transport induced material reconfiguration and performance degradation of CVD-grown monolayer MoS2 transistors

Electron Transport and Device Physics in Monolayer Transition-Metal Dichalcogenides

Modifying the Power and Performance of 2-Dimensional MoS 2 Field Effect Transistors

Crested two-dimensional transistors

Laser Annealing Towards High-Performance Monolayer MoS2 and WSe2 Field Effect Transistors.

Improved Thermal Dissipation in a MoS 2 Field-Effect Transistor by Hybrid High- k Dielectric Layers

High-performance P-Type MoS2 Field-Effect Transistor by Toroidal-Magnetic-field Controlled Oxygen Plasma Doping

Controlled Fabrication of Metallic MoO2 Nanosheets Towards High-Performance P-Type 2D Transistors.

Surface-Enhanced Raman Scattering Monitoring of Oxidation States in Defect-Engineered Two-Dimensional Transition Metal Dichalcogenides

Understanding Iron-Doping Modulating Domain Orientation and Improving the Device Performance of Monolayer Molybdenum Disulfide

Performance Limits and Advancements in Single 2D Transition Metal Dichalcogenide Transistor