Robust charge-density wave strengthened by electron correlations in monolayer 1T-TaSe2 and 1T-NbSe2
Yuki Nakata,Katsuaki Sugawara,Ashish Chainani,Hirofumi Oka,Changhua Bao,Shaohua Zhou,Pei-Yu Chuang,Cheng-Maw Cheng,Tappei Kawakami,Yasuaki Saruta,Tomoteru Fukumura,Shuyun Zhou,Takashi Takahashi,Takafumi Sato
DOI: https://doi.org/10.1038/s41467-021-26105-1
IF: 16.6
2021-10-07
Nature Communications
Abstract:Abstract Combination of low-dimensionality and electron correlation is vital for exotic quantum phenomena such as the Mott-insulating phase and high-temperature superconductivity. Transition-metal dichalcogenide (TMD) 1T-TaS 2 has evoked great interest owing to its unique nonmagnetic Mott-insulator nature coupled with a charge-density-wave (CDW). To functionalize such a complex phase, it is essential to enhance the CDW-Mott transition temperature T CDW-Mott , whereas this was difficult for bulk TMDs with T CDW-Mott < 200 K. Here we report a strong-coupling 2D CDW-Mott phase with a transition temperature onset of ~530 K in monolayer 1T-TaSe 2 . Furthermore, the electron correlation derived lower Hubbard band survives under external perturbations such as carrier doping and photoexcitation, in contrast to the bulk counterpart. The enhanced Mott-Hubbard and CDW gaps for monolayer TaSe 2 compared to NbSe 2 , originating in the lattice distortion assisted by strengthened correlations and disappearance of interlayer hopping, suggest stabilization of a likely nonmagnetic CDW-Mott insulator phase well above the room temperature. The present result lays the foundation for realizing monolayer CDW-Mott insulator based devices operating at room temperature.
multidisciplinary sciences