Abstract:Charge density waves (CDWs) in transition metal dichalcogenides are the subject of growing scientific interest due to their rich interplay with exotic phases of matter and their potential technological applications. Here, using density functional theory with advanced meta-generalized gradient approximations (meta-GGAs) and linear response time-dependent density functional theory (TDDFT) with state-of-the-art exchange-correlation kernels, we investigate the electronic, vibrational, and optical properties in 1T-TiSe2 with and without CDW. In both bulk and monolayer TiSe2, the electronic bands and phonon dispersions in either normal (semi-metallic) or CDW (semiconducting) phase are described well via meta-GGAs, which separate the valence and conduction bands just as HSE06 does but with significantly more computational feasibility. Instead of the underestimated gap with standard exchange-correlation approximations and the overestimated gap with screened hybrid functional HSE06, the band gap of the monolayer TiSe2 CDW phase calculated by the meta-GGA MVS (151 meV) is consistent with the angle-resolved photoemission spectroscopy (ARPES) gap of 153 meV measured at 10 K. In addition, the gap of bulk TiSe2 CDW phase reaches 67 meV within the TASK approximation, close to the ARPES gap of 82 meV. Regarding excitations of many-body nature, for bulk TiSe2 in normal and CDW phases, the experimentally observed humps of electron energy loss spectroscopy and plasmon peak are successfully reproduced in TDDFT, without an obvious kernel dependence. To unleash the full scientific and technological potential of CDWs in transition metal dichalcogenides, the chemical doping, heterostructure engineering, and pump-probe techniques are needed. Our study opens the door to simulating these complexities in CDW compounds from first principles by revealing meta-GGAs as an accurate low-cost alternative to HSE06.

Charge density wave phase suppression in 1T-TiSe2 through Sn intercalation

Modulation of electronic state in copper-intercalated 1T-TaS 2

Enhancing Charge-Density-Wave Order In 1t-Tise2 Nanosheet By Encapsulation With Hexagonal Boron Nitride

Modulating Charge Density Wave Order in a 1T-Tas2/black Phosphorus Heterostructure.

Intertwining of Multiphase Charge Density Waves in In-intercalated TaSe2

Unveiling the Charge Density Wave Inhomogeneity and Pseudogap State in 1T-Tise2

Suppression of the Charge Density Wave State in Two-Dimensional 1T-TiSe 2 by Atmospheric Oxidation.

Persistence of Charge Density Wave Against Variation of Band Structures in V X Ti 1− X Se 2 ( X = 0−0.1)

Suppression of Charge Density Wave by Substrate Induced Doping on TiSe$_2$/TiO$_2$ Heterostructure

Chiral charge density waves induced by Ti-doping in 1T-TaS2

Unraveling Hidden Charge Density Wave Phases in 1T-TiSe_{2}

Modulating charge density wave states in TaSe 2 by an electride substrate

Charge Density Waves and Metal-Insulator Transition in TaSe2

Charge Density Waves and Fermi Level Pinning in Monolayer and Bilayer SnSe_2

From domain walls and the stripe phase to full suppression of charge density wave in the superconducting 1T-Ti$_{1-\text{x}}$Ta$_\text{x}$Se$_2$

Disorder Suppressed Charge-Density-wave and Its Origin in 1T-Tase2-xtex

A Pathway to Efficient Simulations of Charge Density Waves in Transition Metal Dichalcogenides: A Case Study for TiSe2

Charge density waves and metal-insulator transition in TaSe 2

Observation of an Incommensurate Charge Density Wave in Monolayer TiSe 2 / CuSe / Cu ( 1 1 1 ) Heterostructure

Persistent Charge-Density-Wave Order in Single-Layer TaSe2.