Abstract:Due to the pristine interface of the 2D/3D face-tunneling heterostructure with an ultra-sharp doping profile, the 2D/3D tunneling field-effect transistor (TFET) is considered as one of the most promising low-power devices that can simultane-ously obtain low off-state current (IOFF), high on-state current (ION) and steep subthreshold swing (SS). As a key element for the 2D/3D TFET, the intensive exploration of the tunnel diode based on the 2D/3D heterostructure is in urgent need. The transfer technique composed of the exfoliation and the release process is currently the most common approach to fabri-cating the 2D/3D heterostructures. However, the well-established transfer technique of the 2D materials is still unavailable. Only a small part of the irregular films can usually be obtained by mechanical exfoliation, while the choice of the chemical exfoliation may lead to the contamination of the 2D material films by the ions in the chemical etchants. Moreover, the defor-mation of the 2D material in the transfer process due to its soft nature also leads to the nonuniformity of the transferred film, which is one of the main reasons for the presence of the wrinkles and the stacks in the transferred film. Thus, the large-scale fabrication of the high-quality 2D/3D tunnel diodes is limited. In this article, a comprehensive transfer technique that can mend up the shortages mentioned above with the aid of the water and the thermal release tape (TRT) is proposed. Based on the method we proposed, the MoS2/Si tunnel diode is experimentally demonstrated and the transferred monolayer MoS2 film with the relatively high crystal quality is confirmed by atomic force microscopy (AFM), scanning electron microscopy (SEM), and Raman characterizations. Besides, the prominent negative differential resistance (NDR) effect is observed at room temperature, which verifies the relatively high quality of the MoS2/Si heterojunction. The bilayer MoS2/Si tunnel diode is also experimentally fabricated by repeating the transfer process we proposed, followed by the specific analysis of the electrical characteristics. This study shows the advantages of the transfer technique we proposed and indicates the great application foreground of the fabricated 2D/3D heterostructure for ultralow-power tunneling devices.

Abnormal Device Performance in Transferred Multilayer MoS2 Field-Effect Transistors

Electrical Characterization of Back-Gated Bi-Layer MoS2 Field-Effect Transistors and the Effect of Ambient on Their Performances

Wafer-scale Transferred Multilayer MoS2 for High Performance Field Effect Transistors

MoS2/Si Tunnel Diodes Based on Comprehensive Transfer Technique

Uncovering Edge States and Electrical Inhomogeneity in MoS2 Field-Effect Transistors

Effect of Thickness and Thermal Treatment on the Electrical Performance of 2D MoS2 Monolayer and Multilayer Field-Effect Transistors

Electrothermal transport induced material reconfiguration and performance degradation of CVD-grown monolayer MoS2 transistors

Origin of electrically induced defects in monolayer MoS2 grown by chemical vapor deposition

Improved Thermal Dissipation in a MoS 2 Field-Effect Transistor by Hybrid High- k Dielectric Layers

Device simulation study of multilayer MoS 2 Schottky barrier field-effect transistors

High field-effect performance and intrinsic scattering in the two-dimensional MoS2 semiconductors

Enhancing the Performance of MoS2 Field-Effect Transistors Using Self-Assembled Monolayers: A Promising Strategy to Alleviate Dielectric Layer Scattering and Improve Device Performance

Transport Properties of MoO&lt;sub&gt;3&lt;/sub&gt; Contacted Few-Layer MoS&lt;sub&gt;2&lt;/sub&gt; N-type Field-Effect Transistor

High-Performance Wafer-Scale MoS2 Transistors Toward Practical Application

Defects Induced Charge Trapping/Detrapping and Hysteresis Phenomenon in MoS2 Field-Effect Transistors: Mechanism Revealed by Anharmonic Marcus Charge Transfer Theory

Atmospheric Degradation and Performance Recovery of Two‐dimensional MoS2 Field Effect Transistor

Transport Properties Of Moo3 Contacted Few-Layer Mos2 N-Type Field-Effect Transistor

Toward High-mobility and Low-power 2D MoS2 Field-effect Transistors

Effect of Dielectric Interface on the Performance of MoS2 Transistors.

Evolution Application of Two-Dimensional MoS2-Based Field-Effect Transistors

Electrical performance of multilayer MoS2 transistors on high-κ Al2O3 coated Si substrates