Abstract:The incessant reduction of transistor dimensions requires new transformations in devices or novel materials to further sustain Moore's law. From the 5 nm technology node and beyond, the gate-all-around field effect transistor (GAAFET) dominates the semiconductor industry, owing to its ultimate gate electrostatic controllability. Two-dimensional (2D) materials possess the merits of dangling-bond-free surfaces, atomic thicknesses down to sub-1 nm, and high mobility maintenance at sub-1 nm thickness, which are challenges long plaguing traditional three-dimensional (3D) semiconductors. Herein, we devised a double-gated GAAFET (DG GAAFET) based on monolayer MoS2. Compared with a DG GAAFET based on Si with the same footprint, the MoS2 DG GAAFET demonstrates the capability of suppressing short-channel effects out of the regime of the Si DG GAAFET, though a relatively small I-on value, which is attributed to the lower density of states, has been obtained in the monolayer MoS2 DG GAAFET. A single-gated GAAFET based on monolayer MoS2 (MoS2 SG GAAFET) has also been simulated as a control device, which manifests an inferior device performance and degraded short-channel effects compared to those of the MoS2 DG GAAFET, which are revealed by larger SS and a reduced I-on/I-off ratio. It is verified to be feasible to surge I-on by 84% without short-channel effect degradation via the incorporation of an additional channel, bobbing well for the application of the DG GAAFET device based on 2D materials in high-performance electronics. Besides, a logic inverter based on a double-channeled double-gated GAAFET (DG DC GAAFET) based on WSe2 and MoS2 has been simulated, and a voltage gain of 36 has been obtained under a gate voltage of 2 V. Moreover, an additional degree of freedom can be introduced by adding a SiO2 interlayer, which contributes to the subthreshold voltage matching between a MoS2 n-type transistor and a WSe2 p-type transistor, where a voltage gain of 45 at a gate voltage of 2 V has been obtained. Both the above complementary metal-oxide-semiconductor (CMOS) inverter structures can make full play of the inner areas of the GAA structure, which sheds light on the footprint decrease of inverters, leaving room for more electronics to be crammed into a single chip.

Analysis and EOT Scaling on Top‐ and Double‐Gate 2D CVD‐Grown Monolayer MoS2 FETs

High mobility top gated field-effect transistors and integrated circuits based on chemical vapor deposition-derived monolayer MoS 2

Statistical Study of Deep Sub-Micron Dual-Gated Field-Effect Transistors on Monolayer CVD Molybdenum Disulfide Films

Quantum-mechanical effect in atomically thin MoS2 FET

Impact of device scaling on the electrical properties of MoS2 field-effect transistors

Performance Upper Limit of sub-10 nm Monolayer MoS2 Transistors

Wafer-scale Transferred Multilayer MoS2 for High Performance Field Effect Transistors

Effect of Thickness and Thermal Treatment on the Electrical Performance of 2D MoS2 Monolayer and Multilayer Field-Effect Transistors

Investigation of Double-Gate Ferroelectric FET Based on Single-Layer MoS2 with Consideration of Contact Resistance

The Insight and Evaluation of Ultra-Scaled Sub-1 Nm Gate Length Transistors

Controlled Growth of Bilayer-MoS2 Films and MoS2-Based Field-Effect Transistor (FET) Performance Optimization

Realizing Wafer‐Scale and Low‐Voltage Operation MoS2 Transistors Via Electrolyte Gating

Top Gate Engineering of Field-Effect Transistors Based on Wafer-Scale Two-Dimensional Semiconductors

Monolayer Molybdenum Disulfide Transistors with Scaling Dielectric Equivalent Oxide Thickness

MoS2 Dual-Gate MOSFET with Atomic-Layer-Deposited Al2O3 as Top-Gate Dielectric

High-performance monolayer MoS2 field-effect transistor with large-scale nitrogen-doped graphene electrodes for Ohmic contact

High-Performance CVD MoS2 Transistors with Self-Aligned Top-Gate and Bi Contact

Toward High-mobility and Low-power 2D MoS2 Field-effect Transistors

Short-Channel Effect Suppression and Footprint Reduction in Double Gate-All-Around Field Effect Transistors and Inverters Based on Two-Dimensional Materials

Scaling of MoS 2 Transistors and Inverters to Sub-10 nm Channel Length with High Performance

High-Performance Wafer-Scale MoS2 Transistors Toward Practical Application