Abstract:The incessant reduction of transistor dimensions requires new transformations in devices or novel materials to further sustain Moore's law. From the 5 nm technology node and beyond, the gate-all-around field effect transistor (GAAFET) dominates the semiconductor industry, owing to its ultimate gate electrostatic controllability. Two-dimensional (2D) materials possess the merits of dangling-bond-free surfaces, atomic thicknesses down to sub-1 nm, and high mobility maintenance at sub-1 nm thickness, which are challenges long plaguing traditional three-dimensional (3D) semiconductors. Herein, we devised a double-gated GAAFET (DG GAAFET) based on monolayer MoS2. Compared with a DG GAAFET based on Si with the same footprint, the MoS2 DG GAAFET demonstrates the capability of suppressing short-channel effects out of the regime of the Si DG GAAFET, though a relatively small I-on value, which is attributed to the lower density of states, has been obtained in the monolayer MoS2 DG GAAFET. A single-gated GAAFET based on monolayer MoS2 (MoS2 SG GAAFET) has also been simulated as a control device, which manifests an inferior device performance and degraded short-channel effects compared to those of the MoS2 DG GAAFET, which are revealed by larger SS and a reduced I-on/I-off ratio. It is verified to be feasible to surge I-on by 84% without short-channel effect degradation via the incorporation of an additional channel, bobbing well for the application of the DG GAAFET device based on 2D materials in high-performance electronics. Besides, a logic inverter based on a double-channeled double-gated GAAFET (DG DC GAAFET) based on WSe2 and MoS2 has been simulated, and a voltage gain of 36 has been obtained under a gate voltage of 2 V. Moreover, an additional degree of freedom can be introduced by adding a SiO2 interlayer, which contributes to the subthreshold voltage matching between a MoS2 n-type transistor and a WSe2 p-type transistor, where a voltage gain of 45 at a gate voltage of 2 V has been obtained. Both the above complementary metal-oxide-semiconductor (CMOS) inverter structures can make full play of the inner areas of the GAA structure, which sheds light on the footprint decrease of inverters, leaving room for more electronics to be crammed into a single chip.

The Insight and Evaluation of Ultra-Scaled Sub-1 Nm Gate Length Transistors

Performance Analysis of Ultra-thin-Body, Double-Gate pMOSFETs at 5 nm Technology Node

Deep Insight into Channel Engineering of Sub-3 Nm-Node P-Type Nanosheet Transistors with a Quantum Transport Model

Aligned carbon nanotube integrated circuit downsizing toward a sub-10 nm node

Simulation of Novel Nano Low-Dimensional FETs at the Scaling Limit

Sub-10 Nm Two-Dimensional Transistors: Theory and Experiment

Two dimensional semiconducting materials for ultimately scaled transistors

Short-Channel Effect Suppression and Footprint Reduction in Double Gate-All-Around Field Effect Transistors and Inverters Based on Two-Dimensional Materials

In-Depth DTCO Analysis on Scaling Gate-All-Around Nanosheets/Nanowires for 20 Å Node and Beyond Technologies

Top Gate Engineering of Field-Effect Transistors Based on Wafer-Scale Two-Dimensional Semiconductors

Performance Limit of Gate-All-Around Si Nanowire Field-Effect Transistors: an Ab Initio Quantum Transport Simulation

Ultimate 0.34 nm Gate-length Side-Wall Transistors with Atomic Level Channel

Analysis and EOT Scaling on Top‐ and Double‐Gate 2D CVD‐Grown Monolayer MoS2 FETs

Study of Synthetic Electric Field Effects and Quantum Confinement Effects in Extremely Scaled Gate-All-Around Tunnel FET

Quantum Transport Simulation of Sub-1-nm Gate Length Monolayer MoS2 Transistors

Sub-5 Nm Gate Length Monolayer MoTe2 Transistors

Simulations of Quantum Transport in Sub-5-nm Monolayer Phosphorene Transistors

Characterization And Analysis Of Gate-All-Around Si Nanowire Transistors For Extreme Scaling

Multiscale Simulation and Machine Learning Facilitated Design of Two-Dimensional Nanomaterials-Based Tunnel Field-Effect Transistors: A Review

Gate Electrostatic Controllability Enhancement in Nanotube Gate all Around Field Effect Transistor

Efficient ab initio analysis of quantum confinement and band structure effects in ultra-scaled Si1−xGex gate-all-around and fin field-effect transistors for sub-10 nm technology nodes