Abstract:Two-dimensional semiconductors (2DSCs) such as molybdenum disulfide (MoS2) have attracted intense interest as an alternative electronic material in the postsilicon era. However, the ON-current density achieved in 2DSC transistors to date is considerably lower than that of silicon devices, and it remains an open question whether 2DSC transistors can offer competitive performance. A high current device requires simultaneous minimization of the contact resistance and channel length, which is a nontrivial challenge for atomically thin 2DSCs, since the typical low contact resistance approaches for 2DSCs either degrade the electronic properties of the channel or are incompatible with the fabrication process for short channel devices. Here, we report a new approach toward high-performance MoS2 transistors by using a physically assembled nanowire as a lift-off mask to create ultrashort channel devices with pristine MoS2 channel and self-aligned low resistance metal/graphene hybrid contact. With the optimized contact in short channel devices, we demonstrate sub-100 nm MoS2 transistor delivering a record high ON-current of 0.83 mA/mu m at 300 K and 1.48 mA/mu m at 20 K, which compares well with that of silicon devices. Our study, for the first time, demonstrates that the 2DSC transistors can offer comparable performance to the 2017 target for silicon transistors in International Technology Roadmap for Semiconductors (ITRS), marking an important milestone in 2DSC electronics.

Ultimate 0.34 nm Gate-length Side-Wall Transistors with Atomic Level Channel

Vertical MoS2 transistors with sub-1-nm gate lengths

Quantum Transport Simulation of Sub-1-nm Gate Length Monolayer MoS2 Transistors

Monolayer Molybdenum Disulfide Transistors with Single-Atom-Thick Gates.

Sub-10 Nm Monolayer MoS2 Transistors Using Single-Walled Carbon Nanotubes As an Evaporating Mask

Novel 10-Nm Gate Length MoS2 Transistor Fabricated on Si Fin Substrate

Quasi-1-Dimensional Dual-Gate MoS 2 Field-Effect Transistors with 50 nm Channel Length

The Insight and Evaluation of Ultra-Scaled Sub-1 Nm Gate Length Transistors

Sub-5 Nm Gate Length Monolayer MoTe2 Transistors

Pushing the Performance Limit of Sub-100 nm Molybdenum Disulfide Transistors.

A 10 nm Short Channel MoS 2 Transistor without the Resolution Requirement of Photolithography

High-performance monolayer MoS 2 nanosheet GAA transistor

The Integration of Sub-10 Nm Gate Oxide on Mos2 with Ultra Low Leakage and Enhanced Mobility

Scaling of MoS2 Transistors and Inverters to Sub-10 Nm Channel Length with High Performance

Scaling of MoS 2 Transistors and Inverters to Sub-10 nm Channel Length with High Performance

High-Performance Wafer-Scale MoS2 Transistors Toward Practical Application

Sub-100 nm channel length graphene transistors.

Performance Upper Limit of sub-10 nm Monolayer MoS2 Transistors

Ultra-Steep-Slope High-Gain MoS2 Transistors with Atomic Threshold-Switching Gate

Transistors based on Novel 2-D Monolayer Semiconductors Bi2O2Se, InSe, and MoSi2N4 for Enhanced Logic Density Scaling

Ultimate Limit in Optoelectronic Performances of Monolayer WSe 2 Sloping-Channel Transistors