Abstract:Two-dimensional (2D) semiconductors have attracted tremendous interests as natural passivation and atomically thin channels that could facilitate continued transistor scaling. However, air-stable 2D semiconductors with high performance were quite elusive. Recently, extremely air-stable MoSi2N4 monolayer had been successfully fabricated [Hong et al., Science 369, 670 (2020)]. To further reveal its potential applications in the sub-5 nm MOSFETs, there is an urgent need to develop integrated circuits. Here we report first-principles quantum transport simulations on the performance limits of n- and p-type sub-5 nm monolayer (ML) MoSi2N4 metal-oxide-semiconductor FETs (MOSFETs). We find that the on-state current in the MoSi2N4 MOSFETs can be effectively manipulated by the length of gate and underlap (UL), as well as the doping concentration. Very strikingly, we also find that the n-type devices the optimized on-state current can reach up to 1390 and 1025 uA/um for the high performance (HP) and low power (LP) applications, respectively, both of which satisfy the International Technology Roadmap for Semiconductors (ITRS) requirements. Whereas, the optimized on-state current can meet the LP application (348 uA/um) for the p-type devices. Finally, we find that the MoSi2N4 MOSFETs have ultra-low subthreshold swing and power delay product, which have potential to realize the high speed and low power consumption devices. Our results show that MoSi2N4 is an ideal 2D channel material for future competitive ultrascaled devices.

Vertical MoS2 transistors with sub-1-nm gate lengths

Novel 10-Nm Gate Length MoS2 Transistor Fabricated on Si Fin Substrate

Ultimate 0.34 nm Gate-length Side-Wall Transistors with Atomic Level Channel

Pushing the Performance Limit of Sub-100 nm Molybdenum Disulfide Transistors.

Scaling of MoS2 Transistors and Inverters to Sub-10 Nm Channel Length with High Performance

Quantum Transport Simulation of Sub-1-nm Gate Length Monolayer MoS2 Transistors

Scaling of MoS 2 Transistors and Inverters to Sub-10 nm Channel Length with High Performance

A 10 nm Short Channel MoS 2 Transistor without the Resolution Requirement of Photolithography

Transferred van der Waals metal electrodes for sub-1-nm MoS2 vertical transistors

Sub-10 Nm Monolayer MoS2 Transistors Using Single-Walled Carbon Nanotubes As an Evaporating Mask

Quasi-1-Dimensional Dual-Gate MoS 2 Field-Effect Transistors with 50 nm Channel Length

Channel Length Scaling of MoS2 MOSFETs

High-Performance CVD MoS2 Transistors with Self-Aligned Top-Gate and Bi Contact

High-density vertical sidewall MoS2 transistors through T-shape vertical lamination

Ultra-Steep-Slope High-Gain MoS2 Transistors with Atomic Threshold-Switching Gate

Monolayer Molybdenum Disulfide Transistors with Single-Atom-Thick Gates.

Low Sub-Threshold Swing Realization with Contacts of Graphene/h-Bn/mos2 Heterostructures in MoS2 Transistors

High-Performance Wafer-Scale MoS2 Transistors Toward Practical Application

Promising Properties of a Sub-5-nm Monolayer MoSi<sub>2</sub>N<sub>4</sub> Transistor

Promising Properties of Sub-5 nm Monolayer MoSi2N4 Transistor

The Insight and Evaluation of Ultra-Scaled Sub-1 Nm Gate Length Transistors