Abstract:NanoSheet-Gate-All-Around-FETs (NS-GAAFETs) are commonly recognized as the future technology to push the digital node scaling into the sub-3 nm range. NS-GAAFETs are expected to replace FinFETs in a few years, as they provide highly electrostatic gate control thanks to the GAA structure, with four sides of the NS channel entirely enveloped by the gate. At the same time, the NS rectangular cross-section is demonstrated to be effective in its driving strength thanks to its high saturation current, tunable through the NS width used as a design parameter. In this work, we develop a NS-GAAFET compact model and we use it to link peculiar single-device parameters to digital circuit performance. In particular, we use the well-known BSIM-CMG core solver for multigate transistors as a starting point and develop an ad hocresistive and capacitive network to model the NS-GAAFET geometrical and physical structure. Then, we employ the developed model to design and optimize a digital inverter and a five-stage ring oscillator, which we use as a performance benchmark for the NS-GAAFET technology. Through Cadence Virtuoso SPICE simulations, we investigate the digital NS-GAAFET performance for both high-performance and low-power nodes, according to the average future node present in the International Roadmap for Devices and Systems. We focus our analysis on the main different technological parameters with regard to FinFET, i.e., the inner and outer spacers. Our results highlight that in future technological nodes, the choice of alternative low-K dielectric materials for the NS spacers will assume increasing importance, being as relevant, or even more relevant, than photolithographic alignment and resolution at the sub-nm scale.

In-Depth DTCO Analysis on Scaling Gate-All-Around Nanosheets/Nanowires for 20 Å Node and Beyond Technologies

Deep Insight into Channel Engineering of Sub-3 Nm-Node P-Type Nanosheet Transistors with a Quantum Transport Model

Inflection Points in GAA NS-FET to C-FET Scaling Considering Impact of DTCO Boosters

Design Technology Co-Optimization for Gate-All-Around Nanosheet Transistors Considering Source/Drain Confinement and Post- Gate Single Diffusion Break

TCAD-Based Assessment of the Lateral GAA Nanosheet Transistor for Future CMOS

Benchmarking of Analog/RF Performance of Fin-FET, NW-FET, and NS-FET in the Ultimate Scaling Limit

Total-Ionizing-Dose Response of Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors

The Insight and Evaluation of Ultra-Scaled Sub-1 Nm Gate Length Transistors

Symmetric and Excellent Scaling Behavior in Ultrathin <i>n</i>‐ and <i>p</i>‐Type Gate‐All‐Around InAs Nanowire Transistors

Design technique co-optimization approach to GAA FETs for inverter design at advanced technology node

Characterization And Analysis Of Gate-All-Around Si Nanowire Transistors For Extreme Scaling

Improved MEOL and BEOL Parasitic-Aware Design Technology Co-Optimization for 3 Nm Gate-All-Around Nanosheet Transistor

Symmetric and Excellent Scaling Behavior in Ultrathin n‐ and p‐Type Gate‐All‐Around InAs Nanowire Transistors

Performance Limit of Gate-All-Around Si Nanowire Field-Effect Transistors: an Ab Initio Quantum Transport Simulation

Gate Electrostatic Controllability Enhancement in Nanotube Gate all Around Field Effect Transistor

Impact of Gate Dielectric Geometry on the Nanowire MOSFETs Performance and Scaling

Device and Circuit-Level Performance of Carbon Nanotube Field-Effect Transistor with Benchmarking Against A Nano-Mosfet

Study of Synthetic Electric Field Effects and Quantum Confinement Effects in Extremely Scaled Gate-All-Around Tunnel FET

Improved DC Performances of Gate-all-around Si-Nanotube Tunnel FETs Using Gate-Source Overlap

Gate-all-around NWFETs vs. triple-gate FinFETs: Junctionless vs. extensionless and conventional junction devices with controlled EWF modulation for multi-VT CMOS

NS-GAAFET Compact Modeling: Technological Challenges in Sub-3-nm Circuit Performance