Abstract:Tunnel field-effect transistors (TFETs) are promising for use in ultralow-power applications owing to their distinct band-to-band tunneling operation. However, the ON-state current of these Si-based tunnel devices is considerably lower than that of MOSFETs. Furthermore, a high-<inline-formula> <tex-math notation="LaTeX">$\kappa $ </tex-math></inline-formula> dielectric is used as a gate insulator or spacer to increase the TFET’s tunneling field strength; this usually causes fringe-induced barrier lowering and deterioration of its subthreshold characteristics. Here, in this paper, a gate field plate TFET (GFP-TFET) structure is proposed to enhance the driving current and suppress the current kink induced by fringe-induced barrier lowering. A detailed investigation into the effects of a gate field plate on TFET performance was conducted with the help of extensive device simulations. The gate oxide and gate field plate oxide could be used to tailor the electric field lines to increase the electric field in the tunnel junction. Meanwhile, the fringing field concentration was reduced by using a metal with a relatively high work function as the field plate electrode. Thus, the electric field strength decreased near the gate edge and increased in the channel. The GFP-TFET exhibited high driving current and low subthreshold characteristics at the cost of a reduction in cutoff frequency. A GFP-TFET structure with optimized parameters had a <inline-formula> <tex-math notation="LaTeX">$10^{3}\times $ </tex-math></inline-formula> higher ON-state current compared with a normal silicon tunnel FET. The minimum subthreshold swing decreased from 146.3 to 21.4 mV/dec and the ON/OFF current ratio increased from <inline-formula> <tex-math notation="LaTeX">$10^{7}$ </tex-math></inline-formula> to <inline-formula> <tex-math notation="LaTeX">$10^{13}$ </tex-math></inline-formula> compared with a normal TFET.

Improved DC Performances of Gate-all-around Si-Nanotube Tunnel FETs Using Gate-Source Overlap

Gate Electrostatic Controllability Enhancement in Nanotube Gate all Around Field Effect Transistor

A Novel Comb-Gate-Overlap-Source Tunnel Field-Effect Transistor Based on the Electric Field Fringe Effect

A Non-Quasi-static Model for Nanowire Gate-All-around Tunneling Field-Effect Transistors

Design of Complementary GAA-NW Tunneling-Fets of Axial Si-Ge Heterostructure

Numerical study on gate-All-Around tunneling FET with SiO2 core and Si shell structure

Characteristic Enhancement in Tunnel Field-Effect Transistors Via Introduction of Vertical Graded Source

Double Channeled Nanotube Gate All Around Field Effect Transistor with Drive Current Boosted

Design Technology Co-Optimization for Gate-All-Around Nanosheet Transistors Considering Source/Drain Confinement and Post- Gate Single Diffusion Break

Study of Synthetic Electric Field Effects and Quantum Confinement Effects in Extremely Scaled Gate-All-Around Tunnel FET

Performance Limit of Gate-All-Around Si Nanowire Field-Effect Transistors: an Ab Initio Quantum Transport Simulation

A Fully Analytical Current Model for Gate–Source Overlap Tunneling FETs as the Ternary Devices

In-Depth DTCO Analysis on Scaling Gate-All-Around Nanosheets/Nanowires for 20 Å Node and Beyond Technologies

Gate Field Plate Structure for Subthreshold Swing Improvement of Si Line-Tunneling FETs

Drain Source-Engineered Double-Gate Tunnel FET for Improved Performance

Performance Investigation of a Vertical TFET with Inverted-T Channel for Improved DC and Analog/Radio-Frequency Parameters

Design Optimization of a Silicon-Germanium Heterojunction Negative Capacitance Gate-All-Around Tunneling Field Effect Transistor based on a Simulation Study

Novel Postgate Single Diffusion Break Integration in Gate-All-Around Nanosheet Transistors to Achieve Remarkable Channel Stress for N/P Current Matching

Achievement of extremely small subthreshold swing in vertical source-all-around-TFET with suppressed ambipolar conduction

Gate-all-around NWFETs vs. triple-gate FinFETs: Junctionless vs. extensionless and conventional junction devices with controlled EWF modulation for multi-VT CMOS

The Insight and Evaluation of Ultra-Scaled Sub-1 Nm Gate Length Transistors