Abstract:Abstract The steep sub-threshold swing of a tunneling field-effect transistor (TFET) makes it one of the best candidates for low-power nanometer devices. However, the low driving capability of TFETs prevents their application in integrated circuits. In this study, an innovative gate-all-around (GAA) TFET, which represents a negative capacitance GAA gate-to-source overlap TFET (NCGAA-SOL-TFET), is proposed to increase the driving current. The proposed NCGAA-SOL-TFET is developed based on computer-aided design (TCAD) simulations. The proposed structure can solve the problem of the insufficient driving capability of conventional TFETs and is suitable for sub-3-nm nodes. In addition, due to the negative capacitance effect, the surface potential of the channel can be amplified, thus enhancing the driving current. The gate-to-source overlap (SOL) technique is used for the first time in an NCGAA-TFET to increase the band-to-band tunneling rate and tunneling area at the silicon-germanium heterojunction. By optimizing the design of the proposed structure by adjusting the SOL length and the ferroelectric layer thickness, a sufficiently large on-state current of 17.20 μA can be achieved and the threshold voltage can be reduced to 0.31 V with a sub-threshold swing of 44.98 mV/decade. Finally, the proposed NCGAA-SOL-TFET can overcome the Boltzmann limit-related problem, achieving a driving current that is comparable to that of the traditional complementary metal-oxide semiconductor devices.

Design of Complementary GAA-NW Tunneling-Fets of Axial Si-Ge Heterostructure

Device Design for Gate-All-Around-Nanowire Tunneling CMOS-FETs of Axial Ge–Si Heterojunction Through Inverter Performance Evaluation

A Novel High-Performance Planar InAs/GaSb Face-Tunneling FET With Implanted Drain for Leakage Current Reduction

A Novel Planar Architecture for Heterojunction TFETs With Improved Performance and Its Digital Application as an Inverter

Characteristics of InAs/GaSb Line-Tunneling FETs with Buried Drain Technique

A Novel Planar InAs/Si Hetero-TFET with Buried Drain Design and Face-tunneling Technique

A Novel Tunnel FET Design Through Adaptive Bandgap Engineering with Constant Sub-Threshold Slope over 5 Decades of Current and High $\text{i}_{\mathrm {on}}/\text{i}_{\mathrm {OFF}}$ Ratio

Improved DC Performances of Gate-all-around Si-Nanotube Tunnel FETs Using Gate-Source Overlap

A Fully Analytical Current Model for Gate–Source Overlap Tunneling FETs as the Ternary Devices

A Novel Comb-Gate-Overlap-Source Tunnel Field-Effect Transistor Based on the Electric Field Fringe Effect

Device Physics and Design of a L-Shaped Germanium Source Tunneling Transistor

Core-shell type of tunneling nanowire FETs for large driving current with unipolarity

Design Optimization of a Silicon-Germanium Heterojunction Negative Capacitance Gate-All-Around Tunneling Field Effect Transistor based on a Simulation Study

Compact model and projection of silicon nanowire tunneling transistors (NW-tFETs)

Symmetric and Excellent Scaling Behavior in Ultrathin <i>n</i>‐ and <i>p</i>‐Type Gate‐All‐Around InAs Nanowire Transistors

DC and AC characteristics of Si/SiGe based vertically stacked complementary-tunneling FETs

High performance tunnel field-effect transistor by gate and source engineering.

Design of U-Shape Channel Tunnel FETs with SiGe Source Regions

Gate-all-around NWFETs vs. triple-gate FinFETs: Junctionless vs. extensionless and conventional junction devices with controlled EWF modulation for multi-VT CMOS

Device physics and design of T-gate Schottky barrier tunnel FET with adaptive operation mechanism

3-D Self-Aligned Stacked Ge Nanowires Complementary FET Featuring Single Gate Simple Process