Abstract:Tunnel FET (TFET) has attracted much attention as one of promising candidates of MOSFET for low power applications due to its capability of sub-60mV/dec subthreshold slope (SS) at room temperature [1]. It has a gated p-i-n structure switched by band-to-band tunneling (BTBT) mechanism. However, it is difficult to form abrupt source doping profile in the experiments for sharp band bending at the junction, resulting in relatively large SS of experimental demonstrations compared with ideally theoretical expectations. Another critical issue is that the on current (ION) is relatively low, especially for silicon-based TFET. The resulting issues of low ION, including large intrinsic delay and low gain, may also limit its applications. In recent years, most of TFET researchers focused on the methods for SS reduction and the I ON enhancement, including adoption of the small-bandgap materials, heterojunction [2], nanowire structure [3] and advanced annealing technology [4], etc. Mechanism engineering is focused in our research work as a different possible way to solve the TFET issues, not only improving I ON and SS values, but also enhancing comprehensive properties in terms of reduced Miller capacitance [5], immune to the super-linear onset of output characteristics [6] and reduced noise [7], etc.

A Novel Planar Architecture for Heterojunction TFETs With Improved Performance and Its Digital Application as an Inverter

A Novel Planar InAs/Si Hetero-TFET with Buried Drain Design and Face-tunneling Technique

A Novel High-Performance Planar InAs/GaSb Face-Tunneling FET With Implanted Drain for Leakage Current Reduction

Characteristics of InAs/GaSb Line-Tunneling FETs with Buried Drain Technique

The Application of Gate-Drain Underlap Architecture in TFET-based Inverters

A Novel Nanosheet Reconfigurable Field Effect Transistor with Dual-Doped Source/drain

Drain Current Model for Double Gate Tunnel-FETs with InAs/Si Heterojunction and Source-Pocket Architecture

Novel Silicon-Based Tunneling FET with Junction Engineering and Gate Configuration for Low Power Applications (Invited)

A Novel Tunnel FET Design Through Adaptive Bandgap Engineering with Constant Sub-Threshold Slope over 5 Decades of Current and High $\text{i}_{\mathrm {on}}/\text{i}_{\mathrm {OFF}}$ Ratio

Drain Current Model for Double Gate Tunnel-FETs with InAs/Si Heterojunction and Source-Pocket Architecture.

A Novel High-Performance Tunneling Field-Effect Transistor Ternary Inverter

Multi-state Tunnel Field Effect Transistor Based on Face Tunneling with Gate-Source Overlap

Design of AlInAs/InP Tunnel Junction and Its Application in Devices

A GaSb/In0.4Ga0.6As Heterojunction Z-Shaped Tunnel Field-Effect Transistor with High Performance

Steep Switch with Hybrid Operation Mechanism for Performance Improvement (Invited)

T-Shaped III-V Heterojunction Tunneling Field-Effect Transistor

High performance tunnel field-effect transistor by gate and source engineering.

A complementary ternary inverter based on the line tunneling field effect transistors

Design of Complementary GAA-NW Tunneling-Fets of Axial Si-Ge Heterostructure

Experimental Investigation of a Novel Junction-Modulated Hetero-Layer Tunnel FET with the Striped Gate for Low Power Applications.

High Performance Tunnel Field Effect Transistor with a Tri-Material-gate Structure