Abstract:Tunnel FET (TFET) has attracted much attention as one of promising candidates of MOSFET for low power applications due to its capability of sub-60mV/dec subthreshold slope (SS) at room temperature [1]. It has a gated p-i-n structure switched by band-to-band tunneling (BTBT) mechanism. However, it is difficult to form abrupt source doping profile in the experiments for sharp band bending at the junction, resulting in relatively large SS of experimental demonstrations compared with ideally theoretical expectations. Another critical issue is that the on current (ION) is relatively low, especially for silicon-based TFET. The resulting issues of low ION, including large intrinsic delay and low gain, may also limit its applications. In recent years, most of TFET researchers focused on the methods for SS reduction and the I ON enhancement, including adoption of the small-bandgap materials, heterojunction [2], nanowire structure [3] and advanced annealing technology [4], etc. Mechanism engineering is focused in our research work as a different possible way to solve the TFET issues, not only improving I ON and SS values, but also enhancing comprehensive properties in terms of reduced Miller capacitance [5], immune to the super-linear onset of output characteristics [6] and reduced noise [7], etc.

Experimental Investigation of a Novel Junction-Modulated Hetero-Layer Tunnel FET with the Striped Gate for Low Power Applications.

Novel Silicon-Based Tunneling FET with Junction Engineering and Gate Configuration for Low Power Applications (Invited)

A Novel Comb-Gate-Overlap-Source Tunnel Field-Effect Transistor Based on the Electric Field Fringe Effect

A Novel Tunnel FET Design Through Adaptive Bandgap Engineering with Constant Sub-Threshold Slope over 5 Decades of Current and High $\text{i}_{\mathrm {on}}/\text{i}_{\mathrm {OFF}}$ Ratio

A novel Si tunnel FET with 36mV/dec subthreshold slope based on junction depleted-modulation through striped gate configuration

A Novel High-Performance Planar InAs/GaSb Face-Tunneling FET With Implanted Drain for Leakage Current Reduction

A Novel Planar InAs/Si Hetero-TFET with Buried Drain Design and Face-tunneling Technique

A Novel Planar Architecture for Heterojunction TFETs With Improved Performance and Its Digital Application as an Inverter

Characteristics of InAs/GaSb Line-Tunneling FETs with Buried Drain Technique

Steep Switch with Hybrid Operation Mechanism for Performance Improvement (Invited)

High performance tunnel field-effect transistor by gate and source engineering.

Drain Current Model for Double Gate Tunnel-FETs with InAs/Si Heterojunction and Source-Pocket Architecture

Characteristic Enhancement in Tunnel Field-Effect Transistors Via Introduction of Vertical Graded Source

Numerical Study on a Lateral Double-Gate Tunnelling Field Effect Transistor

Drain Current Model for Double Gate Tunnel-FETs with InAs/Si Heterojunction and Source-Pocket Architecture.

High Performance Tunnel Field Effect Transistor with a Tri-Material-gate Structure

Numerical Simulation on Novel Nano-Scale Lateral Double-Gate Tunneling Field Effect Transistor

Complementary tunneling transistor for low power application

Device physics and design of T-gate Schottky barrier tunnel FET with adaptive operation mechanism

Fabrication and Characterization of a Novel Si Line Tunneling TFET with High Drive Current

Self-depleted T-gate Schottky barrier tunneling FET with low average subthreshold slope and high ION/IOFF by gate configuration and barrier modulation