Abstract:This article presents a new line tunneling dominating metal-semiconductor contact-induced SiGe-Si tunnel field-effect transistor with control gate (CG-Line SiGe/Si iTFET). With a structure where two symmetrical control gates at the drain region are given a sufficient negative bias, the overlap of the energy bands at the drain in the OFF-state is effectively suppressed, thus reducing the tunneling probability and significantly decreasing leakage current. Additionally, the large overlap area between the source and gate improves the gate's ability to control the tunneling interface effectively, improving the ON-state current and subthreshold swing characteristics. By using the Schottky contact characteristics of a metal-semiconductor contact with different work functions to form a PN junction, the need to control doping profiles or random doping fluctuations is avoided. Furthermore, as ion implantation is not required, issues related to subsequent annealing are also eliminated, greatly reducing thermal budget. Due to the different material bandgap characteristics selected for the source and drain regions, the probability of overlap of the energy bands in the source region in the ON-state is increased and that in the drain region in the OFF-state is reduced. Based on the feasibility of the actual fabrication process and through rigorous 2D simulation studies, improvements in subthreshold swing and high on/off current ratio can be achieved simultaneously based on the proposed device structure. Additionally, the presence of the control gate structure effectively suppresses leakage current, further enhancing its potential for low-power-consumption applications.

Fabrication and Characterization of a Novel Si Line Tunneling TFET with High Drive Current

Germanium-source L-shaped TFET with dual in-line tunneling junction

Characteristics of InAs/GaSb Line-Tunneling FETs with Buried Drain Technique

High performance tunnel field-effect transistor by gate and source engineering.

A Novel High-Performance Planar InAs/GaSb Face-Tunneling FET With Implanted Drain for Leakage Current Reduction

A Novel Planar InAs/Si Hetero-TFET with Buried Drain Design and Face-tunneling Technique

A Novel Tunnel FET Design Through Adaptive Bandgap Engineering with Constant Sub-Threshold Slope over 5 Decades of Current and High $\text{i}_{\mathrm {on}}/\text{i}_{\mathrm {OFF}}$ Ratio

Device Physics and Design of a L-Shaped Germanium Source Tunneling Transistor

A new line tunneling SiGe/Si iTFET with control gate for leakage suppression and subthreshold swing improvement

Characteristic Enhancement in Tunnel Field-Effect Transistors Via Introduction of Vertical Graded Source

Multi-state Tunnel Field Effect Transistor Based on Face Tunneling with Gate-Source Overlap

A Novel Planar Architecture for Heterojunction TFETs With Improved Performance and Its Digital Application as an Inverter

Towards ultralow-power and high-speed electronics: Tunnel transistor based on single-chain Tellurium

Numerical Simulation on Novel Nano-Scale Lateral Double-Gate Tunneling Field Effect Transistor

Device physics and design of T-gate Schottky barrier tunnel FET with adaptive operation mechanism

A Novel Comb-Gate-Overlap-Source Tunnel Field-Effect Transistor Based on the Electric Field Fringe Effect

High Performance Tunnel Field Effect Transistor with a Tri-Material-gate Structure

Numerical Study on a Lateral Double-Gate Tunnelling Field Effect Transistor

Experimental Investigation of a Novel Junction-Modulated Hetero-Layer Tunnel FET with the Striped Gate for Low Power Applications.

Self-depleted T-gate Schottky barrier tunneling FET with low average subthreshold slope and high ION/IOFF by gate configuration and barrier modulation

Ultra-high on-current in two-dimensional Tl2O TFETs with tunneling width modulation