Abstract:As one of the most promising candidates for future nanoelectronic devices, tunnel field-effect transistors (TFET) can overcome the subthreshold slope (SS) limitation of MOSFET, whereas high ON-current, low OFF-current and steep switching can hardly be obtained at the same time for experimental TFETs. In this paper, we developed a new nanodevice technology based on TFET concepts. By designing the gate configuration and introducing the optimized Schottky junction, a multi-finger-gate TFET with a dopant-segregated Schottky source (mFSB-TFET) is proposed and experimentally demonstrated. A steeper SS can be achieved in the fabricated mFSB-TFET on the bulk Si substrate benefiting from the coupled quantum band-to-band tunneling (BTBT) mechanism, as well as a high I-ON/I-OFF ratio (similar to 10(7)) at V-DS = 0.2 V without an area penalty. By compatible SOI CMOS technology, the fabricated Si mFSB-TFET device was further optimized with a high I-ON/I-OFF ratio of similar to 10(8) and a steeper SS of over 5.5 decades of current. A minimum SS of below 60 mV dec(-1) was experimentally obtained, indicating its dominant quantum BTBT mechanism for switching.

Numerical Study on a Lateral Double-Gate Tunnelling Field Effect Transistor

Numerical Simulation on Novel Nano-Scale Lateral Double-Gate Tunneling Field Effect Transistor

Characteristic Enhancement in Tunnel Field-Effect Transistors Via Introduction of Vertical Graded Source

A Novel Comb-Gate-Overlap-Source Tunnel Field-Effect Transistor Based on the Electric Field Fringe Effect

Drain Current Model for Double Gate Tunnel-FETs with InAs/Si Heterojunction and Source-Pocket Architecture

Numerical Study On Dual Material Gate Nanowire Tunnel Field-Effect Transistor

Drain Current Model for Double Gate Tunnel-FETs with InAs/Si Heterojunction and Source-Pocket Architecture.

Improved Analytical Model of Surface Potential with Modified Boundary Conditions for Double Gate Tunnel FETs.

Double-gate Tunneling FET with Asymmetric Gate Structure and Pocket Source

Analysis of Double Trench Insulated Gate Bipolar Transistor

High Performance Tunnel Field Effect Transistor with a Tri-Material-gate Structure

High performance tunnel field-effect transistor by gate and source engineering.

Current Enhanced Double-Gate TFET with Source Pocket and Asymmetric Gate Oxide

A Novel Tunnel FET Design Through Adaptive Bandgap Engineering with Constant Sub-Threshold Slope over 5 Decades of Current and High $\text{i}_{\mathrm {on}}/\text{i}_{\mathrm {OFF}}$ Ratio

A Simulation Study of Vertical Tunnel Field Effect Transistors

Experimental Investigation of a Novel Junction-Modulated Hetero-Layer Tunnel FET with the Striped Gate for Low Power Applications.

Current Enhanced PNPN Tunnel Field-Effect Transistor with L-shaped Gate

Self-depleted T-gate Schottky barrier tunneling FET with low average subthreshold slope and high ION/IOFF by gate configuration and barrier modulation

Numerical study on gate-All-Around tunneling FET with SiO2 core and Si shell structure

A Novel 10-Nm Physical Gate Length Double-Gate Junction Field Effect Transistor

Numerical study on nanowire tunnel FET with dynamic threshold operation architecture