Abstract:A novel planar architecture is proposed for tunnel field-effect transistors (TFETs). The advantages of this architecture are exhibited, taking the InAs/Si TFET as an example, and the effects of different device parameters are analyzed in detail. Owing to the gate field being parallel to the tunneling interface, the gate control is enhanced, and a better electrical performance is obtained. Moreover, different from a conventional TFET, in which the effective tunneling area and current can hardly be modulated by the gate length, in our proposed device, the effective tunneling area and current can be adjusted depending on the actual requirements of circuit design, which increases the flexibility of TFET-based circuit design. In addition, the device architecture can also be extended to other materials, such as Ge/Si and GaSb/InAs, and thus be used for both n-type and p-type devices. The results show that the complementary digital inverter structure with InAs/Si as the n-type TFET and Ge/Si as the p-type TFET would be helpful for future ultralow power applications. This proposed structure without any complicated fabrication steps shows better compatibility with CMOS technology compared to other TFETs with heterojunction and structural innovations presented in theoretical works.

A Simulation Study of Vertical Tunnel Field Effect Transistors

Analysis of the Subthreshold Characteristics of Vertical Tunneling Field Effect Transistors

Characteristic Enhancement in Tunnel Field-Effect Transistors Via Introduction of Vertical Graded Source

A Novel Comb-Gate-Overlap-Source Tunnel Field-Effect Transistor Based on the Electric Field Fringe Effect

Numerical Study on a Lateral Double-Gate Tunnelling Field Effect Transistor

Demonstration of L-Shaped Tunnel Field-Effect Transistors

Numerical Simulation on Novel Nano-Scale Lateral Double-Gate Tunneling Field Effect Transistor

High performance tunnel field-effect transistor by gate and source engineering.

A Novel Planar InAs/Si Hetero-TFET with Buried Drain Design and Face-tunneling Technique

Experimental Investigation of a Novel Junction-Modulated Hetero-Layer Tunnel FET with the Striped Gate for Low Power Applications.

Multi-state Tunnel Field Effect Transistor Based on Face Tunneling with Gate-Source Overlap

Steep-slope vertical-transport transistors built from sub-5 nm Thin van der Waals heterostructures

Heteromaterial Gate Tunnel Field Effect Transistor with Lateral Energy Band Profile Modulation

High Performance Tunnel Field Effect Transistor with a Tri-Material-gate Structure

A physical current model for junction-modulated tunneling field-effect transistor with steep switching behavior

A Novel Planar Architecture for Heterojunction TFETs With Improved Performance and Its Digital Application as an Inverter

Device Physics and Design of a L-Shaped Germanium Source Tunneling Transistor

Drain Current Model for Double Gate Tunnel-FETs with InAs/Si Heterojunction and Source-Pocket Architecture

A Tunneling Field Effect Transistor Model Combining Interband Tunneling with Channel Transport

Analysis of InAs Vertical and Lateral Band-to-Band Tunneling Transistors: Leveraging Vertical Tunneling for Improved Performance

Investigation of the Junctionless Line Tunnel Field-Effect Transistor