Abstract:Based on a self-consistent Schrodinger-Poisson solver and top-of-the-barrier model, a quantum transport simulator of p-type gate-all-around nanosheet FET is developed. The effects of material (Si/Ge), stress, crystallographic orientation, and cross-sectional size are deeply explored by numerical simulations for the device performance at the sub-3 nm technology node. A strain-dependent 6-band kmiddotp Hamiltonian is incorporated into the model for a more accurate calculation of E-k dispersion in the strain-perturbed valence band structure, where the curvature, energy shift, and splitting of subbands are investigated in detail for hole transport properties. Further, the effect of channel engineering is comprehensively analyzed, by evaluating density-of-states effective mass, average injection velocity, mobility, current density distributions, and the current-voltage characteristics. An effective performance improvement from 2 GPa compressive stress is obtained in [100]/(001) and [110]/(001) channels, with a 7% enhancement of ON-current in Ge nanosheet FETs. While a wider channel crosssection improves the drive current by increasing the effective channel width, a smaller cross-sectional width yields an average increase up to 29% in the ON-state injection velocity due to stronger quantum confinement.

Analysis of the Subthreshold Characteristics of Vertical Tunneling Field Effect Transistors

A Simulation Study of Vertical Tunnel Field Effect Transistors

Characteristic Enhancement in Tunnel Field-Effect Transistors Via Introduction of Vertical Graded Source

Deep Insight into Channel Engineering of Sub-3 Nm-Node P-Type Nanosheet Transistors with a Quantum Transport Model

A Novel Comb-Gate-Overlap-Source Tunnel Field-Effect Transistor Based on the Electric Field Fringe Effect

A Fully Analytical Current Model for Gate–Source Overlap Tunneling FETs as the Ternary Devices

Characteristics of InAs/GaSb Line-Tunneling FETs with Buried Drain Technique

Numerical Study on a Lateral Double-Gate Tunnelling Field Effect Transistor

High performance tunnel field-effect transistor by gate and source engineering.

Multi-state Tunnel Field Effect Transistor Based on Face Tunneling with Gate-Source Overlap

Drain Current Model for Double Gate Tunnel-FETs with InAs/Si Heterojunction and Source-Pocket Architecture

Improved Analytical Model of Surface Potential with Modified Boundary Conditions for Double Gate Tunnel FETs.

Fabrication and Characterization of a Novel Si Line Tunneling TFET with High Drive Current

A Novel Planar InAs/Si Hetero-TFET with Buried Drain Design and Face-tunneling Technique

Performance Improvement of Si Pocket-Tunnel Fet with Steep Subthreshold Slope and High I-On/I-Off Ratio

A novel Si tunnel FET with 36mV/dec subthreshold slope based on junction depleted-modulation through striped gate configuration

A physical current model for junction-modulated tunneling field-effect transistor with steep switching behavior

A compact model for double-gate tunneling field-effect-transistors and its implications on circuit behaviors

High Performance Tunnel Field Effect Transistor with a Tri-Material-gate Structure

Numerical Simulation on Novel Nano-Scale Lateral Double-Gate Tunneling Field Effect Transistor

Steep-slope vertical-transport transistors built from sub-5 nm Thin van der Waals heterostructures