Abstract:Tunnel FET (TFET) has attracted much attention as one of promising candidates of MOSFET for low power applications due to its capability of sub-60mV/dec subthreshold slope (SS) at room temperature [1]. It has a gated p-i-n structure switched by band-to-band tunneling (BTBT) mechanism. However, it is difficult to form abrupt source doping profile in the experiments for sharp band bending at the junction, resulting in relatively large SS of experimental demonstrations compared with ideally theoretical expectations. Another critical issue is that the on current (ION) is relatively low, especially for silicon-based TFET. The resulting issues of low ION, including large intrinsic delay and low gain, may also limit its applications. In recent years, most of TFET researchers focused on the methods for SS reduction and the I ON enhancement, including adoption of the small-bandgap materials, heterojunction [2], nanowire structure [3] and advanced annealing technology [4], etc. Mechanism engineering is focused in our research work as a different possible way to solve the TFET issues, not only improving I ON and SS values, but also enhancing comprehensive properties in terms of reduced Miller capacitance [5], immune to the super-linear onset of output characteristics [6] and reduced noise [7], etc.

Performance Improvement of Si Pocket-Tunnel Fet with Steep Subthreshold Slope and High I-On/I-Off Ratio

High performance tunnel field-effect transistor by gate and source engineering.

Enhancing subthreshold slope and ON-current in a simple iTFET with overlapping gate on source-contact, drain Schottky contact, and intrinsic SiGe-pocket

A novel Si tunnel FET with 36mV/dec subthreshold slope based on junction depleted-modulation through striped gate configuration

High Performance Junctionless FDSOI SiGe Channel P-Finfet with High ION/IOFF Ratio and Excellent SS

Self-depleted T-gate Schottky barrier tunneling FET with low average subthreshold slope and high ION/IOFF by gate configuration and barrier modulation

A Novel Tunnel FET Design Through Adaptive Bandgap Engineering with Constant Sub-Threshold Slope over 5 Decades of Current and High $\text{i}_{\mathrm {on}}/\text{i}_{\mathrm {OFF}}$ Ratio

Characteristics of InAs/GaSb Line-Tunneling FETs with Buried Drain Technique

Steep Switch with Hybrid Operation Mechanism for Performance Improvement (Invited)

Device physics and design of T-gate Schottky barrier tunnel FET with adaptive operation mechanism

Comprehensive performance re-assessment of TFETs with a novel design by gate and source engineering from device/circuit perspective

A Novel Planar InAs/Si Hetero-TFET with Buried Drain Design and Face-tunneling Technique

Characteristic Enhancement in Tunnel Field-Effect Transistors Via Introduction of Vertical Graded Source

Resistive-gate Field-Effect Transistor Exhibiting Steep Subthreshold Slope of 5mv/dec and High ION/IOFF Ratio

A Tunnel-Induced Injection Field-Effect Transistor with Steep Subthreshold Slope and High On-off Current Ratio

A Novel High-Performance Planar InAs/GaSb Face-Tunneling FET With Implanted Drain for Leakage Current Reduction

Tunneling Field-Effect Transistors (TFETs) With Subthreshold Swing (SS) Less Than 60 mV/dec

Experimental Investigation of a Novel Junction-Modulated Hetero-Layer Tunnel FET with the Striped Gate for Low Power Applications.

High Performance Tunnel Field Effect Transistor with a Tri-Material-gate Structure

An improved design of Si PNIN tunneling field effect transistor