Abstract:Based on the bulk-Si substrate, the CMOS tree-like FETs including the FishboneFETs with bottom SiGe nano-fin and the TreeFETs without bottom SiGe nano-fin were both designed and experimentally fabricated. The growth of bottom SiGe layer with different Ge fraction following by an accurately selective etching is developed for realizing SiGe nano-fins between Si nanosheets (NSs). The results show that the ${I}_{\text {on}}/{I}_{\text {off}}$ ratio (over ${1}\times {10} ^{{5}}{)}$ and the short channel effects (SCEs) of TreeFETs are effectively optimized, and the effective channel width ( ${W}_{\text {eff}}{)}$ is increased for FishboneFETs at the same footprint. Due to the hole conduction advantage of SiGe nano-fin, the on-current ( ${I}_{\text {on}}{)}$ of p-type TreeFETs can be higher than that of n-type TreeFETs at ${V}_{\text {OV}}=\vert V_{\text {gs}}$ - ${V}_{\text {th}}\vert =0.5$ V. Meanwhile, the surface scattering of SiGe nano-fin also affects the effective field-effect mobility. As the gate length ( ${L}_{\text {g}}$ ) scaling, both p-type tree-like FETs exhibit more obvious SCEs than n-type devices, which is maybe the reason of a lower hole barrier occurring by the valence band offset ( $\Delta {E}_{\text {v}}{)}$ obtained in the strained SiGe nano-fin. The results provided one meaningful guide for tree-like FETs optimizing future GAAFET process and CMOS circuits.

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