Abstract:In this paper, the novel Quasi-SOI CMOS architecture is fabricated based on bulk Si substrate for the first time. The whole fabrication is basically compatible with the conventional CMOS technology. The path of the draininduced barrier lowering (DIBL) effect can be effectively suppressed by the "L-Type" insulator surrounding the source and drain in Quasi-SOI MOSFET. Such device structure can effectively suppress the short-channel effects (SCEs) and prevent the transistor from the bulk punch-through. The leakage current will not increase with the high doping concentration of the substrate due to the absence of P/N junctions surrounding the S/D regions which brings more flexibility on the modulation of the threshold voltage. Moreover, the influence of process-induced variations on the new transistor performance and implications for manufacturing processes comparing with UTB SOI MOSFET are also studied by simulations in order to investigate the sensitivity of the important characteristics to the device crucial physical parameter fluctuations introduced by the process. The results show that Quasi-SOI MOSFET can be more tolerant of process-induced variation for the deep nanometer scale regime. The highly manufacturable Quasi-SOI MOSFET which can combine the advantages of ultra-thin body (UTB) SOI MOSFET and bulk silicon device can be considered as a promising candidate for highly scaled devices.

Novel Localized-SOI MOSFET's Combining the Advantages of SOI and Bulk Substrates for Highly-Scaled Devices

Experimental investigation of Quasi-SOI MOSFET for highly scaled devices

Quasi-Soi Mosfet: A Novel Architecture Combining the Advantages of Soi and Bulk Devices

Simulation for a Novel Vertical SOI Configuration

A Novel Nanoscaled Device Concept: Quasi-Soi MOSFET to Eliminate the Potential Weaknesses of UTB SOI MOSFET

Quasi-SOI MOSFETs—A Promising Bulk Device Candidate for Extremely Scaled Era

Drain and Source on Insulator MOSFETs Fabricated by Local SIMOX Technology

Experimental Results on Drain and Source on Insulator MOSFETs Fabricated by Local SIMOX Technology

A Simulation Study of Soi-Like Bulk Silicon Mosfet with Improved Performance

Super Junction LDMOS with P-trench and Stepped Buried Oxide Layer for High Performance

A study of source/drain-on-insulator structure for extremely scaled MOSFETs

High Performance Junctionless FDSOI SiGe Channel P-Finfet with High ION/IOFF Ratio and Excellent SS

Analysis and Optimization of SDOI Structure to Maximize the Intrinsic Performance of Extremely Scaled MOSFETs

Scaling capability and design guidelines of a nano-scale quasi-SOI device for low operation power and high-performance applications

Comparison of the Characteristics of DSOI, SOI and Bulk-Si MOSFETs

An Improved SOI LDMOS with Buried Field Plate

Reliability Improvements in SOI-like MOSFET with ESD and Self-Heating Effect

Scaling Capability Improvement of Silicon-on-void (SOV) MOSFET

A Novel Source/drain on Void (SDOV) MOSFET Implemented by Local Co-Implantation of Hydrogen and Helium

Patterned Buried Oxide Layers under A Single Mosfet to Improve the Device Performance

The Localized-SOI MOSFET as a Candidate for Analog/RF Applications