Abstract:In this paper, the novel Quasi-SOI CMOS architecture is fabricated based on bulk Si substrate for the first time. The whole fabrication is basically compatible with the conventional CMOS technology. The path of the draininduced barrier lowering (DIBL) effect can be effectively suppressed by the "L-Type" insulator surrounding the source and drain in Quasi-SOI MOSFET. Such device structure can effectively suppress the short-channel effects (SCEs) and prevent the transistor from the bulk punch-through. The leakage current will not increase with the high doping concentration of the substrate due to the absence of P/N junctions surrounding the S/D regions which brings more flexibility on the modulation of the threshold voltage. Moreover, the influence of process-induced variations on the new transistor performance and implications for manufacturing processes comparing with UTB SOI MOSFET are also studied by simulations in order to investigate the sensitivity of the important characteristics to the device crucial physical parameter fluctuations introduced by the process. The results show that Quasi-SOI MOSFET can be more tolerant of process-induced variation for the deep nanometer scale regime. The highly manufacturable Quasi-SOI MOSFET which can combine the advantages of ultra-thin body (UTB) SOI MOSFET and bulk silicon device can be considered as a promising candidate for highly scaled devices.

Investigation of Thermal Property of Novel DSOI MOSFETs Fabricated with Local SIMOX Technique

Experimental Results on Drain and Source on Insulator MOSFETs Fabricated by Local SIMOX Technology

Electrothermal characterization of SOI FinFETs

Drain and Source on Insulator MOSFETs Fabricated by Local SIMOX Technology

Comparison of the Characteristics of DSOI, SOI and Bulk-Si MOSFETs

Electrothermomechanical analysis of partially insulated field-effect transistors using hybrid nonlinear finite element method

Simulation for a Novel Vertical SOI Configuration

Concurrent Analysis of Self-Heating Effect and Thermal Stress in Partially Insulated Field Effect Transistors (Pifets)

Electrothermal-Stress Interactions of LDMOS FET Induced by DCI RF-Pulses

A Novel Drain Source On Insulator (Dsoi) Structure To Fully Suppress The Floating-Body And Self-Heating Effects

Novel Localized-SOI MOSFET's Combining the Advantages of SOI and Bulk Substrates for Highly-Scaled Devices

Measurement Of Thermal Conductivity Of Buried Oxides Of Silicon-On-Insulator Wafers Fabricated By Separation By Implantation Of Oxygen Technology

Investigation of self-heating effect in SOI-LDMOS by device simulation

Temperature Evaluation of Conventional, SOI, and DSOI Mosfets Using Non-Equilibrium Energy Model

Study on the Thermal Conductivity Characteristics for Ultra-Thin Body FD SOI MOSFETs Based on Phonon Scattering Mechanisms

Experimental investigation of Quasi-SOI MOSFET for highly scaled devices

High Performance Junctionless FDSOI SiGe Channel P-Finfet with High ION/IOFF Ratio and Excellent SS

Patterned Buried Oxide Layers under A Single Mosfet to Improve the Device Performance

Heat dissipation path of self-heating effect for SOI MOSFET considering BOX layer and TiN barrier layer

Investigation of Self-Heating Effect in SOI Tunnel Field-Effect Transistor

The Heat Dissipation Path of Self-Heating Effects for the SOI MOSFET by Considering the BOX Layer and the TiN Barrier Layer