Abstract:Abstract Self-heating effect (SHE) is a severe issue in advanced nano-scaled devices such as stacked nanosheet field-effect transistors (NS-FET), which raises the device temperature ( T D ), that ultimately affects the key electrical characteristics, i.e. threshold voltage ( V T ), DIBL, subthreshold slope (SS), I OFF , I ON , etc. SHE puts design constraints in the advanced CMOS logic devices and circuits. In this paper, we thoroughly investigated the impact of ambient temperature and interface thermal contact resistance induced-self heating effect in the NS-FET using extensive numerical simulations. The weak electron–phonon coupling, phonon scattering, and the ambient temperature-induced joule energy directly coupled with thermal contact resistance cause the SHE-induced thermal degradation, which increases the device temperature ( T D ) and affects the device reliability. The baseline NS-FET is well-calibrated with the experimental data and 3D quantum corrected drift-diffusion coupled hydrodynamic and thermodynamic transport models is used in our TCAD framework to estimate the impact of ambient temperature and interface thermal contact resistance on the device performance. Moreover, we also evaluate the SHE-induced performance comparison of NS-FET with conventional FinFET and found that thermal degradation in NS-FET potentially worsen the electrical characteristics. Thus, a detailed TCAD analysis shows that the ambient temperature and interface thermal contact resistances deteriorate the effective thermal resistance ( R eff ) and device performance metrics.

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Electrothermal characterization of SOI FinFETs

Theoretical Study of Self-Heating-Induced Thermal Stress Effects on Quantum Transport in P-Type Ultrathin Body-FinFET by Multiphysics Simulation

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Multiphysics Simulation Study of Thermal Stress Effects in Nanoscale FinFETs Heterogeneously Integrated with GaN High-Power Device on Silicon Substrate

Investigation of Self-Heating Effects in UTBB FD-SOI MOSFETs by a Modified Thermal Conductivity Model

Investigation of Self-Heating Effect on Forksheet Field-Effect Transistors

Experimental investigation of self heating effect (SHE) in multiple-fin SOI FinFETs

Multiphysics Simulation of Self-Heating-Induced Thermal Stress Effects on Quantum Transport in Gate-All-Around Nanosheet Field Effect Transistors

The Heat Dissipation Path of Self-Heating Effects for the SOI MOSFET by Considering the BOX Layer and the TiN Barrier Layer

Transient Self-Heating Effects on Mixed-Mode Hot Carrier and Bias Temperature Instability in FinFETs: Experiments and Modeling

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PBTI and HCI Degradations of Ultrathin Body InGaAs-On-Insulator Nmosfets Fabricated by Wafer Bonding

Investigation of thermal stress effects on subthreshold conduction in nanoscale p-FinFET from Multiphysics perspective

Investigation of ambient temperature and thermal contact resistance induced self-heating effects in nanosheet FET