Investigation and Improvement of the Bias Temperature Instability in Carbon Nanotube Transistors
Yifu Sun,Peng Lu,Lingyu Zhang,Yu Cao,Lan Bai,Li Ding,Jie Han,Chiyu Zhang,Maguang Zhu,Zhiyong Zhang
DOI: https://doi.org/10.1002/aelm.202400464
IF: 6.2
2024-10-05
Advanced Electronic Materials
Abstract:In this work, the reliability of BTI in top‐gate CNT FETs under a wide range of temperatures is investigated firstly. The CNT devices not only exhibit a high on/off current ratio (Ion/Ioff, ≈105) and a low subthreshold swing (SS) ranging from 200 to 400 K, but also the threshold voltage (Vth) shifts caused by BTI become 2–3 times smaller than previous works. In addition, by optimizing the device fabrication process, the CNT FET presents the Normalized BTI shift down to ≈0.10 V/(MV cm−1), which is by far the most reliable top‐gate nanodevices. Carbon nanotube (CNT) is widely regarded as a promising candidate for constructing sub‐10 nm field‐effect transistors (FETs). However, limited attention is carried out on the reliability of CNT FETs, which is critical for practical application. In this work, the bias temperature instability (BTI) effect in top‐gate CNT FETs is thoroughly investigated under a wide range of environment temperatures from 200 to 400 K for the first time. Notably, the threshold voltage (Vth) shifts induced by BTI are measured down to 0.38 V, which is ≈2–3 times smaller than those reported in previous studies. In addition, by optimizing the device fabrication process, the reliability of the BTI effects in CNT FETs can be further improved. The optimized CNT FET exhibits a Normalized BTI shift down to ≈0.10 V/(MV cm−1), which represents the most reliable top‐gate nano‐devices to date.
materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology