Abstract:We perform a comparative study (both for device and circuit simulations) of three carbon nanotube tunneling field-effect transistor (CNT-TFET) designs: high-K gate dielectric TFETs (HK-TFETs), hetero gate dielectric TFETs (HTFETs) and a novel CNT-TFET-based combination of light doping and hetero gate dielectric TFETs (LD-HTFETs). At device level, the effects of channel and gate dielectric engineering on the switching and high-frequency characteristics for CNT-TFET have been theoretically investigated using a quantum kinetic model. This model is based on two-dimensional non-equilibrium Green's functions solved self-consistently with Poisson's equations. It is revealed that the proposed LD-HTFET structure can significantly reduce leakage current, enhance control ability of the gate on the channel, improve the switching speed, and is more suitable for use in low-power, high-frequency circuits. At circuit level, using HSPICE with look-up table-based Verilog-A models, the performance and reliability of CNT-TFET logic gate circuits is evaluated on the basis of power consumption, average delay, stability, energy consumption and power-delay product (PDP). Simulation results indicate that, compared to a traditional CNT-TFET-based circuit, the one based on LD-HTFET has a significantly better performance (static noise margin, energy, delay, PDP). It is also observed that our proposed design exhibits better robustness under different operational conditions by considering power supply voltage and temperature variations. Our results may be useful for designing and optimizing CNTFET devices and circuits.

Temperature Dependence of Electrical Characteristics of Carbon Nanotube Field-Effect Transistors: A Quantum Simulation Study

Electrothermal Characterization of Carbon Nanotube Field Effect Transistors (Cntfets)

Investigation on self-heating effect in carbon nanotube field-effect transistors

Temperature Effects on Crosstalk in Carbon Nanotube Interconnects

Temperature Dependence of Electronic Behaviors in N-Type Multiple-Channel Junctionless Transistors

Low-Temperature Behavior of Single-Wall Carbon Nanotube Gate-all-Around Field-Effect Transistors

Device and Circuit-Level Performance of Carbon Nanotube Field-Effect Transistor with Benchmarking Against A Nano-Mosfet

Multiphysics Simulation of Self-Heating-Induced Thermal Stress Effects on Quantum Transport in Gate-All-Around Nanosheet Field Effect Transistors

Theoretical Study of Transport Characteristics of Field Effect Transistor with Channel Made of Single-Walled Carbon Nanotube

Full-Band Quantum Transport Based Simulation for Carbon Nanotube Field Effect Transistor from Chirality to Device Performance

Quantum Transport Simulations of Cntfets: Performance Assessment and Comparison Study with Gnrfets

Geometry and Temperature Effects on the Threshold Voltage Characteristics of Silicon Nanowire MOS Transistors

The Effect of Low-Temperature Annealing on the Electrical Characteristics of Carbon Nanotube Network Field-Effect Transistors

ALTRAS-CNFET: Full-band based quantum transport simulator for carbon nanotube field effect transistor engineering: From chirality to device performance

A Compact Model for Carbon Nanotube Field Effect Transistors Incorporating Temperature Effects and Application for Operational Amplifier Design

Modeling And Simulation Of Carbon Nanotube-Semiconductor Heterojunction Vertical Field Effect Transistors

Temperature performance of doping-free top-gate CNT field-effect transistors: Potential for low- and high-temperature electronics

Investigation and Improvement of the Bias Temperature Instability in Carbon Nanotube Transistors

Modelling of Chirality-Dependent Current-Voltage Characteristics of Carbon-Nanotube Field-Effect Transistors

Investigation of Light Doping and Hetero Gate Dielectric Carbon Nanotube Tunneling Field-Effect Transistor for Improved Device and Circuit-Level Performance

Threshold Voltage and 1/f Noise Degradation in Carbon Nanotube Field Effect Transistors under Hot-Carrier Stress