Abstract:This paper investigates the electron and phonon transport and their implications for performance and reliability of single-walled carbon nanotube (SWCNT), double-walled carbon nanotube (DWCNT), and multiwalled carbon nanotube (MWCNT) vias-possibly the most imminent application of carbon nanotube (CNT)-based components in very large scale integration chips. Accurate resistance and thermal conductance models are provided for isolated CNTs, as well as bundles of these, based on detailed electrical and thermal transport physics in the submicrometer regime. It is found that although CNT vias are both electrically and thermally in the ballistic regime, their electrical and thermal performance still cannot match that of Cu via. While the large resistance of CNT vias may not be a significant concern for local interconnects, the resistance must be minimized to avoid degradation of global interconnect performance. Furthermore, detailed 3-D electrothermal simulations indicate that Joule heating and thermal contact resistance between CNTs and metal can be a major bottleneck in extracting the maximum thermal performance from ballistic CNT bundle vias. From a processing perspective, we show that the applicability of MWCNT vias, which are currently being fabricated, is severely limited by their large thermal and electrical resistance. For SWCNT- and DWCNT-based vias, small-diameter CNTs with dense packing as well as good thermal and electrical contact between CNT and metal are needed.

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Electrothermal modelling of novel through-silicon carbon nanotube bundle vias (TS-CNTBV)

Electrothermal modelling and characterisation of submicron through-silicon carbon nanotube bundle vias for three-dimensional ICs

Electrothermal investigation on through silicon multi-walled carbon nanotube via interconnects

Electrothermal modelling of through silicon via (TSV) interconnects

Electrothermal Effects in High Density Through Silicon Via (tsv) Arrays

High-Frequency Analysis of Cu-Carbon Nanotube Composite Through-Silicon Vias

High-Frequency Electrothermal Characterization of TSV-Based Power Delivery Network

Electrothermal Characterization of Carbon Nanotube Field Effect Transistors (Cntfets)

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Electromagnetic Compatibility-Oriented Study on Through Silicon Single-Walled Carbon Nanotube Bundle Via (TS-SWCNTBV) Arrays

Electrothermal modeling of coaxial through silicon via (TSV) for three-dimensional ICs

Electrical Modeling of Three-Dimensional Carbon-Based Heterogeneous Interconnects

Electrothermal Characterization of Single-Walled Carbon Nanotube (SWCNT) Interconnect Arrays

Transmission Characteristics Of A Coaxial Through-Silicon Via (C-Tsv) Interconnect

Carbon Nanotube Vias: Does Ballistic Electron–Phonon Transport Imply Improved Performance and Reliability?

Electrical Characterization of Through-Silicon Vias (TSV) with Different Physical Configurations

Sensitivity analysis of through-silicon via (TSV) interconnects for 3-D ICs

Investigation on self-heating effect in carbon nanotube field-effect transistors

Modeling and Characterization of Carbon-Based Heterogeneous Interconnects for 3-D Ics