Abstract:In this paper, high-frequency electrothermal characteristics of the power delivery network (PDN) are investigated for through-silicon-via (TSV)-based 3-D ICs by utilizing a self-developed electrothermal co-simulation solver. The solver circularly solves the full-wave electromagnetic equation and the steady heat conduction equation using the finite-element method. The preconditioned biconjugate gradient method combined with the element-by-element approximate factorization method is employed to speed up the simulation and save memory cost. Based on the solver, the impacts of the excitation condition and dielectric loss tangent are analyzed for a one-chip power grid, while the influence of TSV location is studied for a two-chip PDN structure. In the modeling, both the conductor and dielectric losses are taken into account, and the temperature dependence of material parameters is treated appropriately. As results, PDN impedance and self-heating-induced temperature rise are emphatically analyzed in a wide frequency range, and the electric field and temperature distributions of several resonance modes are presented. The results would be beneficial for the design and thermal management of 3-D PDNs.

Electrothermal Effects in High Density Through Silicon Via (tsv) Arrays

Electrothermal modelling of through silicon via (TSV) interconnects

Electrothermal modeling of coaxial through silicon via (TSV) for three-dimensional ICs

Electrothermal characteristics of carbon-based through-silicon via (TSV) channel

High-Frequency Electrothermal Characterization of TSV-Based Power Delivery Network

Multiphysics Characterization of Polymer‐filled Through‐silicon Vias (pf‐tsvs) for Three‐dimensional Integration

Multi-physics characterization of through silicon vias (TSV) in the presence of a periodic EMP

Electrical Characterization of Through-Silicon Vias (TSV) with Different Physical Configurations

Electrothermal investigation on through silicon multi-walled carbon nanotube via interconnects

Electromagnetic Compatibility-Oriented Study on Through Silicon Single-Walled Carbon Nanotube Bundle Via (TS-SWCNTBV) Arrays

Electrothermal modelling and characterisation of submicron through-silicon carbon nanotube bundle vias for three-dimensional ICs

Frequency- and temperature-dependent modeling of coaxial through-silicon vias for 3-D ICs

Sensitivity analysis of through-silicon via (TSV) interconnects for 3-D ICs

Transmission Characteristics Of A Coaxial Through-Silicon Via (C-Tsv) Interconnect

Electrical–Thermal Cosimulation of Coaxial TSVs with Temperature-Dependent MOS Effect Using Equivalent Circuit Models

Lumped 3-D Equivalent Thermal Circuit Model for Transient Thermal Analysis of TSV Array

Modeling of a Pair of Annular Through Silicon Vias (TSV)

Multiphysics Characterization of Transient Electrothermomechanical Responses of Through-Silicon Vias Applied With a Periodic Voltage Pulse

Impact of Technology Scaling on Electrical Characteristics of Through-Silicon Via Correlated with Equivalent Circuits

Multi-physics modeling of through-silicon vias with equivalent-circuit approach

Capacitive coupling analysis of TSV array in 3D packaging