Abstract:3D stacking of integrated circuits (ICs) provides significant advantages in saving device footprints, improving power management, and continuing performance enhancement, particularly for many-core systems. However, the stacked structure makes the heat dissipation a challenging issue. While Thermal Through Silicon Via (TTSV) is a promising way of lowering the thermal resistance of dies, past research has either overestimated or underestimated the effects of TTSVs as a consequence of the lack of detailed 3D IC models or system-level simulations. Here, we propose a simulation flow to accurately simulate TTSV effects on 3D ICs. We adopt benchmarks from Splash-2 running on a full-system mode of the gem5 simulator, which generates all the system component activities. McPAT is used to generate the corresponding power consumption and the power traces are fed to HotSpot for thermal simulation. The temperature profiles of 2D and 3D Nehalem-like ×86 processors are compared. TTSVs are later placed close to hotspot regions to facilitate heat dissipation; the peak temperature of 3D Nehalem is reduced by 5--25% with a small area overhead of 6%. By using a detailed 3D thermal model, full-system simulation, and a validated thermal simulator, our results show accurate thermal analysis of 3D ICs.

Lumped 3-D Equivalent Thermal Circuit Model for Transient Thermal Analysis of TSV Array

Electrothermal modeling of coaxial through silicon via (TSV) for three-dimensional ICs

Electrothermal Effects in High Density Through Silicon Via (tsv) Arrays

Electrothermal modelling of through silicon via (TSV) interconnects

Electrical–Thermal Cosimulation of Coaxial TSVs with Temperature-Dependent MOS Effect Using Equivalent Circuit Models

High-Frequency Electrothermal Characterization of TSV-Based Power Delivery Network

Modeling of a Pair of Annular Through Silicon Vias (TSV)

Electrical-Thermal Co-Simulation For Through Silicon Via And Active Tier In 3-D Ic

Frequency- and temperature-dependent modeling of coaxial through-silicon vias for 3-D ICs

Electrical-thermal Co-Analysis of Through Silicon Via with Equivalent Circuit Model

A Physics-Aware Methodology for Equivalent Circuit Model Extraction of TSV-inductors

Multi-physics characterization of through silicon vias (TSV) in the presence of a periodic EMP

Electrothermal modelling and characterisation of submicron through-silicon carbon nanotube bundle vias for three-dimensional ICs

Modeling and Characterization of Joule Heating in Metal Core of Tsv

Capacitive coupling analysis of TSV array in 3D packaging

Compact Wideband Equivalent-Circuit Model for Electrical Modeling of Through-Silicon Via

Full RLGC Model Extraction of Through Silicon Via (TSV) with Charge Distribution Effects

A Network Topological Approach-Based Transient 3-D Electrothermal Model of Insulated-Gate Bipolar Transistor

Multi-physics modeling of through-silicon vias with equivalent-circuit approach

System-Level Analysis of 3D ICs with Thermal TSVs

A Thermal Network Model for Multichip Power Modules Enabling to Characterize the Thermal Coupling Effects