Abstract:Annular through-silicon via (TSV) is one of the promising solutions for vertical interconnects in three-dimensional integration, which diminishes mismatch effects of the coefficients of thermal expansion between two different materials and saves cost, as compared with other TSV structures. In this study, an analytical impedance model is proposed. Closed-form formulas for calculations of the per-unit-height resistances and inductances are derived by calculating the electromagnetic field quantities in the cylindrically multilayered media, via solving the longitudinal current densities in the conducting layers. Combining with the conventional admittance model, a compact transmission line model is obtained, which can be used to model the electrical properties of annular TSVs. These formulas appropriately capture the real current distribution because of skin effects in metal conductors as well as the eddy current loss in semiconductor regions. The results from these analytical formulas have comparable accuracy as those obtained by the full-wave solver in a wideband frequency range, yet much higher computational efficiency than existing modelling methods.

Modeling of a Pair of Annular Through Silicon Vias (TSV)

Electrothermal modeling of coaxial through silicon via (TSV) for three-dimensional ICs

Frequency- and temperature-dependent modeling of coaxial through-silicon vias for 3-D ICs

Electrothermal modelling of through silicon via (TSV) interconnects

Electrical Characterization of Through-Silicon Vias (TSV) with Different Physical Configurations

Transmission Characteristics Of A Coaxial Through-Silicon Via (C-Tsv) Interconnect

Electrothermal investigation on through silicon multi-walled carbon nanotube via interconnects

Modeling annular through-silicon Via pairs in 3-D integration

Electrothermal modelling and characterisation of submicron through-silicon carbon nanotube bundle vias for three-dimensional ICs

Sensitivity analysis of through-silicon via (TSV) interconnects for 3-D ICs

Electrothermal modelling of novel through-silicon carbon nanotube bundle vias (TS-CNTBV)

Electromagnetic Compatibility-Oriented Study on Through Silicon Single-Walled Carbon Nanotube Bundle Via (TS-SWCNTBV) Arrays

Closed-Form Impedance Model for Annular Through-Silicon Via Pairs in Three-Dimensional Integration

Compact Wideband Equivalent-Circuit Model for Electrical Modeling of Through-Silicon Via

Multi-physics modeling of through-silicon vias with equivalent-circuit approach

A Rigorous Model for Through-Silicon Vias with Ohmic Contact in Silicon Interposer

Full RLGC Model Extraction of Through Silicon Via (TSV) with Charge Distribution Effects

Electrical–Thermal Cosimulation of Coaxial TSVs with Temperature-Dependent MOS Effect Using Equivalent Circuit Models

Capacitive coupling analysis of TSV array in 3D packaging

Lumped 3-D Equivalent Thermal Circuit Model for Transient Thermal Analysis of TSV Array

Modeling and Application of Multi-Port TSV Networks in 3-D IC