Abstract:Along with extensive applications of through-silicon vias (TSVs) in 3-D systems, such as digital, logic, and memory modules, the accurate modeling of coupling capacitance between the TSVs is becoming indispensable to the signal integrity analysis of the system design. In this paper, the static characteristics of potential, electric field, and charges between signal-ground TSVs in a floating substrate are investigated, and accordingly, the effect of MOS capacitance on the coupling capacitance between signal and ground TSVs is accurately modeled and analyzed for both static and high-frequency situations. Furthermore, the impact of substrate admittance on the capacitance-voltage dependence is explored. Parametric studies are performed to study the effects of different physical and material parameters on the coupling capacitance, which include TSV radius, liner thickness, doping concentration, amount of oxide charges, and work function of TSV filling materials. Based on the proposed model, the nonlinear effect of the coupling capacitance on transient noise is examined and explained.

Capacitive coupling analysis of TSV array in 3D packaging

Frequency- and temperature-dependent modeling of coaxial through-silicon vias for 3-D ICs

Electrothermal modelling of through silicon via (TSV) interconnects

Electrothermal modeling of coaxial through silicon via (TSV) for three-dimensional ICs

Electromagnetic Compatibility-Oriented Study on Through Silicon Single-Walled Carbon Nanotube Bundle Via (TS-SWCNTBV) Arrays

Sensitivity analysis of through-silicon via (TSV) interconnects for 3-D ICs

Modeling of a Pair of Annular Through Silicon Vias (TSV)

Electrothermal Effects in High Density Through Silicon Via (tsv) Arrays

Transmission Characteristics Of A Coaxial Through-Silicon Via (C-Tsv) Interconnect

Full RLGC Model Extraction of Through Silicon Via (TSV) with Charge Distribution Effects

Coupling capacitance extraction in through-silicon via (TSV) arrays

Electrothermal investigation on through silicon multi-walled carbon nanotube via interconnects

Electrical Characterization of Through-Silicon Vias (TSV) with Different Physical Configurations

Characteristics of Coupling Capacitance Between Signal-Ground TSVs Considering MOS Effect in Silicon Interposers

Capacitance Extraction of Three-Dimensional Interconnects Using Element-By-Element Finite Element Method (Ebe-Fem) and Preconditioned Conjugate Gradient (pcg) Technique

Analytical Model of the Coupling Capacitance Between Cylindrical Through Silicon Via and Horizontal Interconnect in 3D IC.

Analysis of Multiple Vias Coupling in Silicon Interposer by Using Cylindrical Mode Expansion Method

Different designs of TSVs for 3D IC: Signal integrity analysis with cascaded scattering matrix

PDN Impedance Modeling for Multiple Through Vias Array in Doped Silicon

Signal Integrity Analysis of Through-Silicon Via Based 3D Integrated Circuit

Crosstalk Reduction in TSV Arrays with Direct Ohmic Contact Between Metal and Silicon-Substrate