Abstract:This paper introduces the first comprehensive and accurate compact resistance-inductance-capacitance-conductance (RLCG ) model for through-silicon vias (TSVs) in 3-D ICs valid from low- to high-frequency regimes, with consideration of the MOS effect in silicon, the alternating-current (ac) conduction in silicon, the skin effect in TSV metal, and the eddy currents in the silicon substrate. The model is verified against electrostatic measurements as well as a commercial full-wave electromagnetic simulation tool and subsequently employed for various performance (delay) analyses. The compact model is also applicable to TSVs made of carbon nanotube (CNT) bundles, once a slight modification (making the effective conductivity complex) is made. Various geometries (as per the International Technology Roadmap for Semiconductors) and prospective materials (Cu, W, and single-walled/multiwalled CNTs) are evaluated, and a comparative performance analysis is presented. It is shown that CNT-bundle-based TSVs can offer smaller or comparable high-frequency resistance than those of other materials due to the reduced skin effect in CNT bundle structures. On the other hand, the performance (delay) analysis indicates that the performance differences among different TSV materials are rather small. However, it is shown that CNTs provide an improved heat dissipation path due to their much higher thermal conductivity. In addition, the improved mechanical robustness and thermal stability of CNTs also favor their selection as TSV materials in emerging 3-D ICs.

Signal Integrity Analysis of Through-Silicon Via Based 3D Integrated Circuit

Compact Wideband Equivalent-Circuit Model for Electrical Modeling of Through-Silicon Via

Sensitivity analysis of through-silicon via (TSV) interconnects for 3-D ICs

Electrothermal modeling of coaxial through silicon via (TSV) for three-dimensional ICs

Frequency- and temperature-dependent modeling of coaxial through-silicon vias for 3-D ICs

Compact AC Modeling and Performance Analysis of Through-Silicon Vias in 3-D ICs

Methods and designs for improving the signal integrity for 3D electrical interconnects in high performance IC packaging

Full RLGC Model Extraction of Through Silicon Via (TSV) with Charge Distribution Effects

Capacitive coupling analysis of TSV array in 3D packaging

Electrical Modeling and Characterization of Shield Differential Through-Silicon Vias

An Efficient Method for Comprehensive Modeling and Parasitic Extraction of Cylindrical Through-Silicon Vias in 3d Ics

High-Frequency Electrical Model of Through-Silicon Vias for 3-D Integrated Circuits Considering Eddy Current and Proximity Effects

Electrical-thermal Co-Analysis of Through Silicon Via with Equivalent Circuit Model

Analytical Model of the Coupling Capacitance Between Cylindrical Through Silicon Via and Horizontal Interconnect in 3D IC.

A Semi-Analytical Approach for System-Level Electrical Modeling of Electronic Packages with Large Number of Vias

Different designs of TSVs for 3D IC: Signal integrity analysis with cascaded scattering matrix

A Rigorous Model for Through-Silicon Vias with Ohmic Contact in Silicon Interposer

Multi-physics modeling of through-silicon vias with equivalent-circuit approach

Electrical modeling and analysis of polymer-cavity through-silicon vias

PDN Impedance Modeling for Multiple Through Vias Array in Doped Silicon

Modeling annular through-silicon Via pairs in 3-D integration